{"title":"Model for a technological procedure of chemical profile etching","authors":"Myhailo Y. Kravetsky, A. Lyubchenko, A. Fomin","doi":"10.1117/12.368409","DOIUrl":null,"url":null,"abstract":"A simple model for the chemical profile etching is considered. The process is shown to substantially depend on the gap between the sample and the tool. Some experimental results are given that support the theoretical predictions made. These results serve as a basis for an attempt to apply the model considered to more complicated cases.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"67 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
A simple model for the chemical profile etching is considered. The process is shown to substantially depend on the gap between the sample and the tool. Some experimental results are given that support the theoretical predictions made. These results serve as a basis for an attempt to apply the model considered to more complicated cases.