Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K

Abstract

Diffusion length (L) of minority carriers was determined in not intentionally doped Cd0.93Zn0.07Te single crystals by the EBIC method at temperatures 80-300K using an evaporated Au Schottky barrier for a separation of electron- hole pairs. The L values in P-(CdZn)Te were longer, than those of the binary CdTe and some showed a steep increase with decreasing temperature. The correlation of the diffusion length measurements with photoluminescence for the (CdZn)Te was observed. Temperature dependence of L for holes in N-(CdZn)Te fabricated by In diffusion were measured as well.