B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov
{"title":"Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films","authors":"B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov","doi":"10.1117/12.368357","DOIUrl":null,"url":null,"abstract":"The thermally induced currents (TIC) and instabilities of photoresponse in Pb1-x-ySnxGeyTe(IN) films on BaF2 substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature TM corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The thermally induced currents (TIC) and instabilities of photoresponse in Pb1-x-ySnxGeyTe(IN) films on BaF2 substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature TM corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.