Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films

B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov
{"title":"Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films","authors":"B. Akimov, V. A. Bogoyavlenskiy, L. Ryabova, V. N. Vasil'kov","doi":"10.1117/12.368357","DOIUrl":null,"url":null,"abstract":"The thermally induced currents (TIC) and instabilities of photoresponse in Pb1-x-ySnxGeyTe(IN) films on BaF2 substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature TM corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368357","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The thermally induced currents (TIC) and instabilities of photoresponse in Pb1-x-ySnxGeyTe(IN) films on BaF2 substrates have been investigated at temperatures 4.2 < T < 30 K. The temperature TM corresponding to maximum values of single TIC peaks appears to be extremely low varying from 6 K up to 14 K. The combined effect of lighting and slight heating of the sample from 4.2 K up to approximately 6 K results in photoresponse instabilities depending on the experimental regime. The results are interpreted in terms of thermal excitation of charge carriers from metastable impurity level.
PbTe(in)基薄膜的热感应电流和光响应的不稳定性
在4.2 < T < 30 K的温度下,研究了BaF2衬底上Pb1-x-ySnxGeyTe(in)薄膜的热诱导电流和光响应的不稳定性。单个TIC峰最大值对应的温度TM在6 ~ 14 K范围内表现为极低。光照和样品从4.2 K到大约6 K的轻微加热的综合效应导致光响应不稳定,这取决于实验制度。从亚稳杂质能级对载流子的热激发解释了这一结果。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信