{"title":"外延层CdHgTe应力对光电探测器制备过程中杂质扩散的影响","authors":"L. Monastyrskii","doi":"10.1117/12.368407","DOIUrl":null,"url":null,"abstract":"We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"80 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors\",\"authors\":\"L. Monastyrskii\",\"doi\":\"10.1117/12.368407\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"80 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368407\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368407","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors
We have investigated changing of diffusion migration through thin heteroepitaxial layers of cadmium-mercury-telluride under stress influence, which have created by differences between thermal extension coefficients of layers and substrate. We have analyzed by numerical experiment cases homogeneous and exponential mechanical stress in 2 and 3 layers structure. It was studied the time evolution of diffusion concentration profiles of impurity through epitaxial layers under influence of different mechanical stresses.
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