{"title":"A2B6半导体中费米能级的固定","authors":"V. Babentsov","doi":"10.1117/12.368381","DOIUrl":null,"url":null,"abstract":"The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Pinning of the Fermi level in A2B6 semiconductors\",\"authors\":\"V. Babentsov\",\"doi\":\"10.1117/12.368381\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368381\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.
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