Pinning of the Fermi level in A2B6 semiconductors

Abstract

The phenomenon of Fermi-level 'pinning' was investigated in A2B6 compounds such as CdTe, ZnTe and others. By comparison of many data we have shown that the same energy EFS equals 4, 9 eV is valid for A2B6 compounds as for A4and A3B5 semiconductors. On this basis the position of Fermi-level 'pinning' for A2B6 compounds within band-gaps is predicted. The nature of Fermi-level 'pinning' is discussed.