{"title":"等温CVD法中GaAs1-xPx/GaAs的沉淀机理","authors":"V. A. Voronin, S. Guba, Marina A. Litvin","doi":"10.1117/12.368405","DOIUrl":null,"url":null,"abstract":"In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.","PeriodicalId":276773,"journal":{"name":"Material Science and Material Properties for Infrared Optics","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method\",\"authors\":\"V. A. Voronin, S. Guba, Marina A. Litvin\",\"doi\":\"10.1117/12.368405\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.\",\"PeriodicalId\":276773,\"journal\":{\"name\":\"Material Science and Material Properties for Infrared Optics\",\"volume\":\"41 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-11-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Material Science and Material Properties for Infrared Optics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1117/12.368405\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Material Science and Material Properties for Infrared Optics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.368405","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method
In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.
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