Precipitation mechanism of GaAs1-xPx/GaAs in the isothermal CVD method

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368405

V. A. Voronin, S. Guba, Marina A. Litvin

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Abstract

In this paper possibilities of the UV-spectroscopy method to investigate the kinetic of the gas phase formation in the system GaP-PCl3-AsCl3-H2 are discussed. The model describing the mechanism of GaAsx-P1-x/GaAs layers epitaxial deposition is suggested at the isothermal CVD-method.

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等温CVD法中GaAs1-xPx/GaAs的沉淀机理

本文讨论了用紫外光谱法研究GaP-PCl3-AsCl3-H2体系气相形成动力学的可能性。提出了等温cvd法描述GaAsx-P1-x/GaAs层外延沉积机理的模型。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Material Science and Material Properties for Infrared Optics

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