Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe

Material Science and Material Properties for Infrared Optics Pub Date : 1999-11-04 DOI:10.1117/12.368331

O. Lanskaya, E. Lilenko, A. Voitsekhovskii

引用次数: 0

Abstract

The composition of subsurface region MZT has been studied using Rutherford backscattering spectroscopy (RBS) ions helium. Interrelation of the electrical properties of MIS structures with the result of RBS have been determinated. It is found that the effective surface charge is connected with composition stoichiometry variation of subsurface region semiconductor.

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Hg1-xZnxTe的MIS结构特征与化学计量扰动的相关性

利用卢瑟福后向散射光谱(RBS)离子氦研究了亚表层MZT的组成。确定了MIS结构的电学性质与RBS结果之间的相互关系。发现有效表面电荷与亚表面区半导体的组成化学计量变化有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Material Science and Material Properties for Infrared Optics

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