Properties and stability of parameters of highly compensated PbS-CdS, PbS-SnS, PbS-PbO, and PbTe-CdTe films

Abstract

The properties of highly compensated quasiuniform films of Pb1-xSnxS, Pb1-xCdxS, (PbS)1-x-(PbO)x, Pb1-xCdxTe solid solutions with a sodium acceptor impurity are described in this work. The films were grown by the method of molecular beam epitaxy on BaF2 substrates. It was shown that the films with different composition have the identical electric and photoelectric properties. Temperature dependences of Hall coefficient, dark resistivity and photoconductivity relaxation time have activation character. A high stability of electric and photoelectric parameters after thermal impact and after prolonged storage in the air was obtained.