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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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Photo-ASICs: integrated circuits for optical measurements using industrial CMOS technology 光电专用集成电路:使用工业CMOS技术进行光学测量的集成电路
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148985
J. Kramer, P. Seitz, H. Baltes
{"title":"Photo-ASICs: integrated circuits for optical measurements using industrial CMOS technology","authors":"J. Kramer, P. Seitz, H. Baltes","doi":"10.1109/SENSOR.1991.148985","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148985","url":null,"abstract":"Cost-effective single-chip smart photosensors (photo-ASICs) have a wide range of applications in optical metrology systems. They may be realized through the integration of light-sensitive structures together with analog and digital electronic circuitry using a standard silicon process. Different optical sensing devices to be used as elements of such photo-ASICs (application-specific integrated circuits) were fabricated in an industrial CMOS process. Various types of vertical photodiodes, a lateral photodiode, a position-sensitive device, linear surface-channel and buried-channel charge-coupled devices, and a bucker-brigade device have been designed, fabricated in multi-project wafer services at low cost, and characterized electrically and optically. The electrical and optical performance proved to be surprisingly good.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133259673","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Laser machining of silicon for fabrication of new microstructures 用于制造新型微结构的硅的激光加工
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148925
M. Alavi, S. Buttgenbach, A. Schumacher, H. Wagner
{"title":"Laser machining of silicon for fabrication of new microstructures","authors":"M. Alavi, S. Buttgenbach, A. Schumacher, H. Wagner","doi":"10.1109/SENSOR.1991.148925","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148925","url":null,"abstract":"A method for fabrication of new types of microstructures with high aspect ratio is described. This technique is based on the local destruction of limiting","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131745402","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 20
Corner compensation techniques in anisotropic etching of 各向异性刻蚀中的角补偿技术
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148910
H. Sandmaier, H. Offereins, K. Kuhl, W. Lang
{"title":"Corner compensation techniques in anisotropic etching of","authors":"H. Sandmaier, H. Offereins, K. Kuhl, W. Lang","doi":"10.1109/SENSOR.1991.148910","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148910","url":null,"abstract":"Various compensation structures preventing the undercutting of convex corners of","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124312658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Improved stability at the polymeric membrane/solid-contact interface of solid-state potentiometric ion sensors 提高了固态电位离子传感器在聚合物膜/固体接触界面的稳定性
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148999
H. D. Goldberg, G. Cha, D. Liu, M. Meyerhoff, R.B. Brown
{"title":"Improved stability at the polymeric membrane/solid-contact interface of solid-state potentiometric ion sensors","authors":"H. D. Goldberg, G. Cha, D. Liu, M. Meyerhoff, R.B. Brown","doi":"10.1109/SENSOR.1991.148999","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148999","url":null,"abstract":"Solid-state ion sensors have been developed in which permselective polymeric membranes are cast on solid electrode surfaces with no internal electrolyte solution. While solid electrode contacts lead to simple, flexible fabrication processes, sensors of this type have had the serious drawback of drifting over time. In the present study, it was found that adding silicon tetrachloride adhesion promoter to polyurethane-based ion-selective membranes cast over silver epoxy solid electrode contacts significantly improved the potentiometric stability of the resulting solid-state potassium-selective sensors. The increased stability is thought to be the result of a better-defined interfacial potential between the sensing membrane and the solid electrode contact. This is attributed to better membrane adhesion to the electrode and to the formation of a silver chloride layer on the surface of the solid contact.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"147 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133931429","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Stress free assembly technique for a silicon based pressure sensor 硅基压力传感器的无应力装配技术
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149056
H. Offereins, H. Sandmaier, B. Folkmer, U. Steger, W. Lang
{"title":"Stress free assembly technique for a silicon based pressure sensor","authors":"H. Offereins, H. Sandmaier, B. Folkmer, U. Steger, W. Lang","doi":"10.1109/SENSOR.1991.149056","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149056","url":null,"abstract":"A silicon-based piezoresistive pressure sensor that is mechanically decoupled from the housing is presented. The chip is mounted via an intermediate with bellow structures to the housing. Various forms and arrangements of bellow structures and their influence on the mechanical decoupling of the chip are observed. The advantages and disadvantages of the individual structures and setups are compared by means of finite-element-method simulations and metrological characterizations of the structures realized. The investigations show that assembly-induced stresses in the area of the piezoresistors can be reduced up to 99%.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"43 32","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114006099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 26
Gas-lubricated micro-bearings for microactuators 用于微执行器的气体润滑微轴承
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149030
J. Huang, Q. Tong, P.-S. Mao
{"title":"Gas-lubricated micro-bearings for microactuators","authors":"J. Huang, Q. Tong, P.-S. Mao","doi":"10.1109/SENSOR.1991.149030","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149030","url":null,"abstract":"The advantages and scale-down of gas lubricated bearings are discussed. The effect of molecular mean free path on the bearing is considered. An aerodynamic spiral grooved microbearing and an externally pressurized microbearing have been designed and fabricated by processes derived from the IC fabrication process. They have been used in micromotors with a rotor diameter of 60 mu m and a hub diameter of 20 mu m.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124456707","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Linear motion microactuators using piezoelectric thin films 压电薄膜线性运动微致动器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148798
W. Robbins, D. Polla, T. Tamagawa, D. Glumac, J. Judy
{"title":"Linear motion microactuators using piezoelectric thin films","authors":"W. Robbins, D. Polla, T. Tamagawa, D. Glumac, J. Judy","doi":"10.1109/SENSOR.1991.148798","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148798","url":null,"abstract":"Two novel types of microactuators for linear displacements are presented which use piezoelectric thin films for the electrical-to-mechanical energy process. One actuator uses a folded path or meander line geometry to produce tethered linear displacements. The other actuator uses an inertial recoil mechanism in conjunction with an electrostatic clamp to produce incremental stepping motion. Sufficient repetition of the stepping sequence produces virtually unlimited travel range, being limited by practical considerations such as electrical connections. Electromechanical models for both actuators are developed and are used to quantitatively estimate the performance of actuators designed to a particular set of dimensions. Fabrication procedures for making both microactuators have been developed, and the status of the fabrication efforts is presented.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128581416","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Fourier analysis based on spatial symmetry in transducers 基于空间对称的换能器傅里叶分析
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148906
P. Munter
{"title":"Fourier analysis based on spatial symmetry in transducers","authors":"P. Munter","doi":"10.1109/SENSOR.1991.148906","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148906","url":null,"abstract":"A novel approach to analyze transducer effects on the basis of their spatial symmetry is presented. To this end, symmetric transducers with multiple modes of operation with different spatial orientations are needed. The response obtained after scanning all modes is written as a Fourier series, of which each coefficient corresponds to a particular symmetry relation. All transducer effects with different symmetry relations can be extracted directly from the spatial frequency spectrum. A 16-contact symmetrical Hall plate is used as an example.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117264281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Concepts for the design of smart sensors and smart signal processors and their application to PSD displacement transducers 智能传感器和智能信号处理器的设计概念及其在PSD位移传感器中的应用
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148915
J. van Drecht, G. Meijer, P. de Jong
{"title":"Concepts for the design of smart sensors and smart signal processors and their application to PSD displacement transducers","authors":"J. van Drecht, G. Meijer, P. de Jong","doi":"10.1109/SENSOR.1991.148915","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148915","url":null,"abstract":"General ideas for a systematic design of smart sensors and processors are presented. Although the ideas are based on classical theory, their consequent and systematic application has been shown to result in novel, simple, and accurate processors. The concept is demonstrated by a novel design for a PSD (position-sensitive device) displacement transducer. With a simple, low-cost circuit, the processor inaccuracy is less than 10/sup -4/ for the displacement range of 3 mm, which is ten times better than that of the PSD itself. The PSD nonidealities form the main cause of the limited accuracy. The output signal is especially suited for processing with microcontrollers. The measurement time is about 100 ms.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114177602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
A micromachining technique for a thin silicon membrane using merged epitaxial lateral overgrowth of silicon and SiO/sub 2/ for an etch-stop 一种利用硅和SiO/sub / /外延横向过度生长相融合的硅薄膜微加工技术
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149070
J. Pak, A. Kabir, G. Neudeck, J. Logsdon, D. DeRoo, S. E. Staller
{"title":"A micromachining technique for a thin silicon membrane using merged epitaxial lateral overgrowth of silicon and SiO/sub 2/ for an etch-stop","authors":"J. Pak, A. Kabir, G. Neudeck, J. Logsdon, D. DeRoo, S. E. Staller","doi":"10.1109/SENSOR.1991.149070","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149070","url":null,"abstract":"A micromachining technology using merged epitaxial lateral overgrowth (MELO) of silicon, combined with SiO/sub 2/ as an etch-stop, was developed. When epitaxial lateral overgrowth (ELO) silicon merges on top of SiO/sub 2/ islands, it forms a local silicon-on-insulator (SOI) film which can be transformed into a thin silicon diaphragm needed for micromechanical sensors. The SiO/sub 2/ islands then act as a near-perfect etch-stop during back etching due to its negligible etch rate in KOH- or ethylenediamine-based solution. This technique permits the formation of both transducers and transistor structures in the same film since it does not require a highly doped film for the etch-stop. The diaphragm thickness is controlled by the epitaxial silicon growth rate ( approximately=0.1 mu m/min) rather than by traditional etching techniques. A single-crystal silicon diaphragm 9 mu m thick and 250 mu m*1000 mu m was realized. Diodes fabricated in the MELO silicon showed characteristics similar to those in bulk silicon, including reverse bias leakage currents.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114870354","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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