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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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Detection of P(O/sub 2/)-changes within a few milliseconds using sputtered strontium titanate 利用溅射钛酸锶在几毫秒内检测P(O/sub 2/)-变化
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148947
J. Gerblinger, H. Meixner
{"title":"Detection of P(O/sub 2/)-changes within a few milliseconds using sputtered strontium titanate","authors":"J. Gerblinger, H. Meixner","doi":"10.1109/SENSOR.1991.148947","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148947","url":null,"abstract":"Between 700 and 1100 degrees C the electrical conductivity of undoped SrTiO/sub 3/ changes from p-type to n-type as P(O/sub 2/) decreases from 1 to 10/sup -15/ bar. For bulk materials the response time t/sub R90/ of the oxygen sensor upon changes of the oxygen partial pressure in the surrounding atmosphere decreases quadratically with the thickness of the sensitive material. Thick samples show a diffusion-controlled dependence of their response time. Thin films of about 1 mu m exhibit response times in the range of a few milliseconds at temperatures of 1000 degrees C. Comparing the activation energy with values given in the literature for bulk materials shows that for great changes of the oxygen partial pressure the response time of the sputtered films is controlled by the diffusion of the oxygen vacancies in the sensitive material. The lower activation energies for oxygen diffusion in and out of the sensitive material at above 800 degrees C indicate an effect where the response time of the oxygen sensor is dominated by the reaction of the oxygen molecules on the surface of the sensitive material.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114477564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Preliminary results of a silicon condenser microphone with internal feedback 具有内部反馈的硅电容传声器的初步结果
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148856
A. van der Donk, A. Sprenkels, W. Olthuis, P. Bergveld
{"title":"Preliminary results of a silicon condenser microphone with internal feedback","authors":"A. van der Donk, A. Sprenkels, W. Olthuis, P. Bergveld","doi":"10.1109/SENSOR.1991.148856","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148856","url":null,"abstract":"In order to overcome the problem of a too large bias voltage and to increase the bandwidth of silicon condenser microphones with small air gaps, an electrostatic feedback system is presented that will reduce the movement of the diaphragm of the microphone. It is shown that a 10-fold reduction of the movement of the diaphragm is possible for microphones with an air gap of 35 mu m. However, to get a reduction of about ten times over a wide range of frequencies, an actuator with a larger sensitivity is needed. This can be achieved by the use of a smaller air gap, which may also increase the sensor sensitivity.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114782025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Vibration rectification in silicon micromachined accelerometers 硅微机械加速度计的振动整流
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148807
L. Christel, M. Bernstein, R. Craddock, K. Petersen
{"title":"Vibration rectification in silicon micromachined accelerometers","authors":"L. Christel, M. Bernstein, R. Craddock, K. Petersen","doi":"10.1109/SENSOR.1991.148807","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148807","url":null,"abstract":"The phenomenon of vibration rectification in silicon accelerometers is described. Examples of the effect are looked at for the case of piezoresistive silicon micromachined accelerometers. Quad-beam (doubly clamped) devices are compared to dual-beam (simple cantilever) devices. It is shown that for dual-beam accelerometers, the majority of vibration rectification can be attributed to simple quadratic nonlinearity of the accelerometer response and that the other rectification effects are at least an order of magnitude lower. The dual-beam devices perform substantially better than quad-beam devices. It is noted that this effect should be considered when applying these devices to DC measurements, especially when high levels of vibration may be present.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132261573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
New transduction materials and their application in sonar transducers 新型换能器材料及其在声纳换能器中的应用
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148854
R. Ting
{"title":"New transduction materials and their application in sonar transducers","authors":"R. Ting","doi":"10.1109/SENSOR.1991.148854","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148854","url":null,"abstract":"Piezoelectric ceramic-polymer composites having connectivity patterns of both the 0-3 and the 1-3 types were investigated for applications in the development of large-area hydrophones for future hull-mounted conformal sonar arrays. The ceramic phase included the conventional lead zirconate titanate and new lead titanates. Different epoxy and polyurethane resins, as well as conventional neoprene rubber, have been used as the polymer phase in the composites. Prototype hydrophones as large as 15 cm*15 cm were fabricated and incorporated into small arrays for the evaluation of their acoustical performance. The free-field voltage sensitivities of these large-area hydrophones were found to be satisfactory for sonar applications over a broad acoustic frequency range. The performance of composite hydrophones was also shown to be independent of pressure up to at least 20 MPa. The advantages of using these composite materials in meeting the design requirements of affordable and reliable large conformal arrays are also discussed.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134030657","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Molecular sensing using plasma polymer films (on quartz) 利用等离子体聚合物薄膜(石英)进行分子传感
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149059
I. Sugimoto, M. Nakamura, H. Kuwano
{"title":"Molecular sensing using plasma polymer films (on quartz)","authors":"I. Sugimoto, M. Nakamura, H. Kuwano","doi":"10.1109/SENSOR.1991.149059","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149059","url":null,"abstract":"An experimental study reveals that plasma polymers containing high concentrations of stable radicals and pi -conjugated moieties are powerful probe materials for molecular sensing. Specific and sensitive sensor systems can be constructed of quartz crystals coated with these films, and molecular classification techniques can be used to analyze the transient piezoelectric responses of these crystals. Sensor probes consisting of plasma polymer films coated on quartz crystal microbalance are investigated. These sensor systems respond reversibly and reproducibly, alternating exposure to vaporized molecules and to air. Molecular classification mapping, reflecting physiochemical characteristics of target molecules, gives valuable information for molecular sensing.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"55 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133594041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Light-controlled, electrochemical, anisotropic etching of silicon 硅的光控、电化学、各向异性蚀刻
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148821
R. Voss, H. Siedel, H. Baumgartel
{"title":"Light-controlled, electrochemical, anisotropic etching of silicon","authors":"R. Voss, H. Siedel, H. Baumgartel","doi":"10.1109/SENSOR.1991.148821","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148821","url":null,"abstract":"The process of electrochemical silicon etching in alkaline solutions was found to depend on the illumination. Experiments in 30% KOH revealed that on p-type silicon light shifts the passivation potential towards more positive values, whereas on n-type samples this shift is in the negative direction. As a consequence, etching can be initiated by light on p-type silicon when a potential slightly above etch stop is chosen. Similarly, etching currently in progress can be stopped by light on n samples when a potential slightly below etch stop is chosen. These effects are expected to open up new possibilities for micromachining, such as light-controlled etching of n-Si membranes or light-induced anisotropy effects in p-Si.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133961798","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A cheap interface for a general sensor, resulting in high selectivity and linear output signals: application to a two dimensional array of tin oxide gas sensors to detect carbon monoxide and methane 通用传感器的廉价接口，产生高选择性和线性输出信号:应用于二维氧化锡气体传感器阵列，以检测一氧化碳和甲烷
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148874
P. Van Geloven, M. Honore, J. Roggen, R. Mertens
{"title":"A cheap interface for a general sensor, resulting in high selectivity and linear output signals: application to a two dimensional array of tin oxide gas sensors to detect carbon monoxide and methane","authors":"P. Van Geloven, M. Honore, J. Roggen, R. Mertens","doi":"10.1109/SENSOR.1991.148874","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148874","url":null,"abstract":"It is demonstrated that the direct data conversion (DDC) algorithm in combination with diode convertor networks provides an easy way to build n-dimensional sensor systems, able to detect the concentrations of n gases. The interface described substantially improves the selectivity of an array of tin oxide gas sensors. In contrast to pattern recognition techniques, where it is difficult to predict concentrations of gases, it becomes possible not only to predict the gases present in a mixture but also to determine their concentrations. The output signals of the interface vary linearly with the gas concentrations to be measured. The interface also makes it possible to solve the problem of drift. The only requirement is that the drift of the characteristics of the sensor as a function of time are known. A prototype has been built for the detection of carbon monoxide and methane concentrations in mixtures of these gases and in the presence of ambient humidity.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124106360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Overhung electrostatic microgripper 悬挂式静电微夹持器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148952
C. Kim, A. Pisano, R. Muller
{"title":"Overhung electrostatic microgripper","authors":"C. Kim, A. Pisano, R. Muller","doi":"10.1109/SENSOR.1991.148952","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148952","url":null,"abstract":"A monolithic microgripper unit suitable for mounting on a micropositioner has been designed and fabricated by a combination of surface and bulk micromachining. The unit consists of a silicon die (7*5 mm), a 1.5-mm-long support cantilever made from p/sup +/-substrate material and protruding from the die, and a 400- mu m-long polysilicon microgripper attached at the end of the support cantilever. The microgripper is electrostatically driven by flexible, interdigitated comb pairs. The microgripper has significantly smaller feature sizes than previously reported surface- and bulk-micromachined structures. Problems addressed successfully in the microgripper fabrication include the protection of surface-micromachined fine structures during etching and rinsing. Embedding the polysilicon structures in PSG (phosphosilicate glass) film during etching in EPW, introducing break lines to the PSG membrane, and partial blocking of liquid flow during final PSG etching and rinsing in DI water have been the keys to a successful fabrication sequence.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"118 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127370617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 21
Physics of AlGaAs compounds for sensing applications 传感应用中AlGaAs化合物的物理学
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148867
J. Robert, V. Mosser, S. Contreras
{"title":"Physics of AlGaAs compounds for sensing applications","authors":"J. Robert, V. Mosser, S. Contreras","doi":"10.1109/SENSOR.1991.148867","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148867","url":null,"abstract":"It is shown that a new type of monolithic pressure sensor for high-pressure operation can be developed using the scientific properties of deep impurity states (so-called DX centers) in III-V semiconducting compounds. Due to the large intrinsic sensitivity of these tapping levels to hydrostatic pressure, all mechanical problems related to the use of a diaphragm at high pressure can be avoided. This approach is also based on the possibilities offered by band gap engineering: the development of very clean and well-controlled epitaxial growth techniques (molecular beam epitaxy, metal-organic chemical vapor deposition) opens new opportunities for measuring device applications. Particular attention is given to GaAlAs solid-state pressure sensors (passive 3-D sensors and active 2-D sensors).<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127433319","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
A transducer based upon vacuum tunneling 一种基于真空隧道的换能器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148893
K. A. Stephenson, M. Bocko
{"title":"A transducer based upon vacuum tunneling","authors":"K. A. Stephenson, M. Bocko","doi":"10.1109/SENSOR.1991.148893","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148893","url":null,"abstract":"The phenomenon of quantum-mechanical vacuum tunneling of electrons between conductors is highly sensitive to the separation of the conductors. This sensitivity is exploited by using vacuum tunneling to detect the relative motion of two conductors. The basic theory of the tunneling transducer is presented. It is shown that the vacuum tunneling transducer can be more sensitive than a conventional reciprocal transducer and that it can surpass the limits which the amplifier forces upon a reciprocal transducer. The noise present within the tunneling transducer is discussed, and experimental results are presented.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128049912","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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