发布求助
文献互助 智能选刊 最新文献

TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

筛选
英文 中文
A detailed study of the behavior and distribution of water inside ion selective membranes 离子选择膜内水的行为和分布的详细研究
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148998
D. J. Harrison, Xizhong Li, S. Petrovic
{"title":"A detailed study of the behavior and distribution of water inside ion selective membranes","authors":"D. J. Harrison, Xizhong Li, S. Petrovic","doi":"10.1109/SENSOR.1991.148998","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148998","url":null,"abstract":"Water uptake in plasticized polyvinylchloride based ion selective membranes is found to be a two-stage process. In the first stage water is dissolved in the polymer matrix and moves rapidly, with a diffusion coefficient of around 10/sup -6/ cm/sup 2//s. During the second stage a phase transformation occurs that is probably water droplet formation. Transport at this stage shows an apparent diffusion coefficient of 2*10/sup -8/ cm/sup 2//s at short times, but this value changes with time and membrane additives in a complex fashion. The results show clear evidence of stress in the membranes due to water uptake, and that a water-rich surface region develops whose thickness depends on the additives. Hydrophilic additives are found to increase the equilibrium water content, but decrease the rate at which uptake occurs.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123157192","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Selective measurement of organic vapors using SAW sensors with reactive or sorptive coatings: steric, electronic, and solubility factors 有机蒸汽的选择性测量使用SAW传感器与反应性或吸附性涂层:空间，电子和溶解度因素
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149060
E. Zellers, S. Patrash, Guo‐Zheng Zhang
{"title":"Selective measurement of organic vapors using SAW sensors with reactive or sorptive coatings: steric, electronic, and solubility factors","authors":"E. Zellers, S. Patrash, Guo‐Zheng Zhang","doi":"10.1109/SENSOR.1991.149060","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149060","url":null,"abstract":"Models for predicting vapor/coating sorption based on the physical and chemical properties of the coatings and vapors have been investigated in an effort to establish selection criteria for sorptive SAW sensor array coatings for organic vapors. Sensor response data for two coatings exposed to over 30 organic vapors have been used to examine four predictive models. These preliminary results show that semiquantitative prediction of SAW sensor responses is possible. In an alternative approach, SAW sensor coatings containing reactive trapping agents have been used to selectively detect various olefin vapors. Advantage is taken of the ability of certain olefins to replace ethylene in reagents of the general formula PtCl/sub 2/(ethylene)(substituted-pyridine). Subtle differences in the steric properties of the olefin vapors, and the steric and electronic properties of the pyridine ligand in the trapping reagent lead to significant changes in sensor response.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127528363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimization of efficiency and response time of diffusion-based nuclear radiation detectors 扩散型核辐射探测器效率和响应时间的优化
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148886
S. Wouters, T. Otaredian, E. Schooneveld
{"title":"Optimization of efficiency and response time of diffusion-based nuclear radiation detectors","authors":"S. Wouters, T. Otaredian, E. Schooneveld","doi":"10.1109/SENSOR.1991.148886","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148886","url":null,"abstract":"The charge collection process in a diffusion-based silicon nuclear radiation detector was investigated by illuminating the detector at the backside with optical radiation. The results are compared to calculations and show good agreement. The collection mechanism is characterized, and the detector response to nuclear radiation and its optimum with respect to efficiency and response time are calculated. Efficiency and response time are improved by reducing the detector thickness. The lower limit of detector thickness is set by the noise level and varies for different measurement systems and applications. It is concluded that a diffusion-based nuclear radiation detector is not inherently slow and inefficient after its performance has been optimized by selecting the right detector thickness.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124724256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Surface micromachined structures fabricated with silicon fusion bonding 表面微机械结构制造的硅熔合
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148895
K. Petersen, D. Gee, F. Pourahmade, R. Craddock, J. Brown, L. Christel
{"title":"Surface micromachined structures fabricated with silicon fusion bonding","authors":"K. Petersen, D. Gee, F. Pourahmade, R. Craddock, J. Brown, L. Christel","doi":"10.1109/SENSOR.1991.148895","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148895","url":null,"abstract":"A surface micromachining technique has been developed which makes use of silicon fusion bonding. Many of the same types of micromechanical devices previously fabricated from polycrystalline have been fabricated from single-crystal silicon. Bridges and beams suspended near the substrate surface, complex thermally isolated designs, diaphragms suspended over shallow vacuum cavities, vertically and laterally resonant structures, fluid control devices, and fully released components have been created. It is concluded that this novel surface micromachining process is a powerful and versatile technology for a new generation of micromechanical inventions.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126640849","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 13
An integrated absolute temperature sensor with digital output 一个集成的绝对温度传感器与数字输出
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148916
F. Riedijk, J. H. Huijsing
{"title":"An integrated absolute temperature sensor with digital output","authors":"F. Riedijk, J. H. Huijsing","doi":"10.1109/SENSOR.1991.148916","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148916","url":null,"abstract":"A smart temperature sensor is described which provides a pulse rate output and is highly suitable for communication with microprocessors. The temperature sensor generates an absolute-temperature current as well as a temperature-independent reference current. The fully synchronized output signal offers important advantages over asynchronous signals, such as frequency or duty cycle, which are often used. A high digital interference rejection is one of the main consequences of synchronization. Hence the described smart temperature sensor is highly compatible with advanced on-chip digital processing or a digital bus system. The sigma-delta analog-to-digital converter is appropriate for both general and specific smart sensor purposes because of its excellent integration compatibility and digital interference rejection.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115330884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Fiber optic power-feed system 光纤供电系统
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149012
T. Tamura, T. Togawa, P. Oberg
{"title":"Fiber optic power-feed system","authors":"T. Tamura, T. Togawa, P. Oberg","doi":"10.1109/SENSOR.1991.149012","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149012","url":null,"abstract":"An effort was made to realize an optical power-feed system by which power can be supplied to the sensors and interfacing circuits. Laser light was transmitted to solar cells in which the optical energy is converted into electrical energy. A laser diode (wavelength 813 nm, maximum optical power 800 mW) was used as a light source. A laser diode with graded-index fiber coupling (230 mu m in core diameter) was connected to the solar cells. Several solar cells connected in series are assembled around the fiber end. The active area of each solar cell was 0.5*0.27 cm. The open-circuit voltage and the short-circuit current were measured. The result obtained was that open-circuit voltage was linearly related to the number of solar cells, while short-circuit current was decreased in inverse proportion to the number of solar cells. In an eight-solar-cell configuration, the open-circuit current was about 7 mA with an optical power of the laser diode of 650 mW.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115992510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Mechanical and structural characterization of in-situ phosphorus doped plasma enhanced alpha silicon films 原位掺磷等离子体增强α硅薄膜的力学和结构表征
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149049
D. Flowers, L. Ristić, H. G. Hughes
{"title":"Mechanical and structural characterization of in-situ phosphorus doped plasma enhanced alpha silicon films","authors":"D. Flowers, L. Ristić, H. G. Hughes","doi":"10.1109/SENSOR.1991.149049","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149049","url":null,"abstract":"The mechanical and structural analysis of 350 degrees C deposited, plasma-enhanced and annealed alpha silicon films was performed. Very high, electrically active doping levels of phosphorus in silicon were achieved at even 750 degrees C anneal. The reason for such high activity is shown by TEM and electron diffraction analysis to be the formation of large polycrystallites when plasma-enhanced alpha silicon is annealed. This is in opposition to the small grain size with a large volume of grain boundaries when polysilicon is deposited at 650 degrees C and annealed further, later. Cantilever beams made out of alpha polysilicon were demonstrated, although it seems that the polysilicon is more suitable for micromechanical structures.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122855966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Real time measurement of instantaneous torque by magnetostrictive sensor 用磁致伸缩传感器实时测量瞬时转矩
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148899
Y. Nishibe, Y. Nonomura, K. Tsukada, M. Takeuchi
{"title":"Real time measurement of instantaneous torque by magnetostrictive sensor","authors":"Y. Nishibe, Y. Nonomura, K. Tsukada, M. Takeuchi","doi":"10.1109/SENSOR.1991.148899","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148899","url":null,"abstract":"A novel torque measurement system has been developed using a magnetostrictive sensor and a digital sensor processing technique. This system contains a miniature magnetostrictive sensor, a digital signal processor (DSP), and a rotary encoder. The miniature sensor does not require a special space for installation. Generally, inexpensive commercial steels with high strength are used for the torque drive shaft of an automobile, although their magnetic properties are quite poor. With this system, instantaneous torque can be accurately measured in real time, even of a shaft made of a commercial steel. Therefore, the application of this system to automobiles would be effective. The torque was measured within an error of 2% FS in spite of using a commercial shaft (carbon steel S43C).<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129887525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Operation of sub-micron gap electrostatic comb-drive actuators 亚微米间隙静电梳状驱动器的操作
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149025
T. Hirano, T. Furuhata, K. J. Gabriel, H. Fujita
{"title":"Operation of sub-micron gap electrostatic comb-drive actuators","authors":"T. Hirano, T. Furuhata, K. J. Gabriel, H. Fujita","doi":"10.1109/SENSOR.1991.149025","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149025","url":null,"abstract":"Resonant and nonresonant operation of submicron gap, electrostatic, comb-drive actuators is reported. Using a single-mask process and a 4- mu m-thick phosphorus-doped polysilicon layer as the structural material, a resonant actuator and a nonresonant, linear actuator were fabricated and tested. Resonant displacement amplitude of +or-5.2 mu m was observed in a resonant actuator with 0.3- mu m gaps when an AC drive voltage of 11.5 V (peak) without bias was applied. Maximum displacements of 3.6 mu m were observed in a nonresonant linear actuator with 0.2- mu m gaps when a DC drive voltage of 11.1 V was applied. A postrelease assembly technique is used to position and fix the comb-drive suspension such that the drive electrodes of the nonresonant linear actuator are in the submicron gap region prior to the application of the drive voltage. Measured displacements of linear actuators with 0.2-0.65- mu m gaps show little hysteresis and observed performance parameters which are in good agreement with theoretical predictions.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129107011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
An RIE process for submicron, silicon electromechanical structures 亚微米硅机电结构的RIE工艺
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148927
Z.L. Zhang, N. MacDonald
{"title":"An RIE process for submicron, silicon electromechanical structures","authors":"Z.L. Zhang, N. MacDonald","doi":"10.1109/SENSOR.1991.148927","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148927","url":null,"abstract":"A reactive ion etching (RIE) process was used for the fabrication of submicron, single-crystal silicon (SCS) mechanical structures. The process gives excellent control of lateral dimensions (<0.8 mu m) with large vertical depth (4 mu m). The etch rate is independent of crystal orientation; thus, the process can produce complex SCS structures. The released (freely suspended) submicron. SCS mechanical structures are produced using silicon RIE. Anisotropic silicon RIE is used to form unreleased SCS structures from a silicon substrate with vertical sidewall profiles. Isotropic silicon RIE is used to release the SCS structures by etching silicon underneath the SCS structures. Self-aligned silicon dioxide is used for masking the top and sidewalls of the SCS structures and for electrical insulation. The process incorporates the formation of side-drive capacitor structures using aluminum electrodes to induce the driving force on the SCS mechanical structures. A compatible 4- mu m step coverage aluminum metallization process using aluminum sputter deposition and isotropic RIE complements the basic RIE process. The two integrated processes offer unique materials and processing technologies for micromechanics.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"180 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114205314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 38
下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：604180095
Book学术官方微信