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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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The Seebeck effect in highly conductive mu c-Ge:H films and its application to sensors 高导电性mu c-Ge:H薄膜中的塞贝克效应及其在传感器中的应用
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149034
S. Kodato, K. Kuroda, Y. Naito
{"title":"The Seebeck effect in highly conductive mu c-Ge:H films and its application to sensors","authors":"S. Kodato, K. Kuroda, Y. Naito","doi":"10.1109/SENSOR.1991.149034","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149034","url":null,"abstract":"By combining a plasma CVD (chemical vapor deposition) system with a real-time annealing monitoring system, a highly conductive mu c-Ge:H film has been successfully fabricated on a glass substrate. This film generates a large amount of thermoelectric power (maximum -420 mu V/K). Using this microcrystalline Ge:H film thermopile, an optical power sensor and thermal vacuum gauge have been developed. In particular, when this mu c-Ge:H thermopile was used together with a low-reflectance Ni-P optical absorber, a high-accuracy, quick-response laser beam power sensor with the following characteristics was realized: responsivity, 0.3 mV/mW; response time, 1.8 s; wavelength range, 0.4 to 1.8 mu m; diameter of active area, 6 mm phi ; and resistance, 600 Omega to 1 k Omega .<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124386715","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Motion investigation of electrostatic servo-accelerometers by means of transparent ITO fixed electrodes 用透明ITO固定电极研究静电伺服加速度计的运动
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148812
B. Kloeck, S. Suzuki, S. Tsuchitani, M. Miki, M. Matsumoto, K. Sato, A. Koide, Y. Sugisawa
{"title":"Motion investigation of electrostatic servo-accelerometers by means of transparent ITO fixed electrodes","authors":"B. Kloeck, S. Suzuki, S. Tsuchitani, M. Miki, M. Matsumoto, K. Sato, A. Koide, Y. Sugisawa","doi":"10.1109/SENSOR.1991.148812","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148812","url":null,"abstract":"The authors introduce a novel thin film material for sensors and actuators: indium tin oxide (ITO). ITO has the unique feature of combining low electrical resistivity and high visual transparency. Thin ITO films were deposited by DC-sputtering to form the fixed electrodes of a capacitive servo-accelerometer. Since the movable electrode of the accelerometer is visible during real operation of the sensor, its behavior can be studied under various conditions. One investigation presented is a study of the motion of the movable electrode at high electrostatic voltages, and its effect on the measurement range of the sensor. The benefits of ITO for mass production are illustrated by means of the evaluation of the temperature behavior of the accelerometers.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124082627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Deep dry etching techniques as a new IC compatible tool for silicon micromachining 深干刻蚀技术是一种新型集成电路兼容的硅微加工工具
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148928
C. Linder, T. Tschan, N. D. de Rooij
{"title":"Deep dry etching techniques as a new IC compatible tool for silicon micromachining","authors":"C. Linder, T. Tschan, N. D. de Rooij","doi":"10.1109/SENSOR.1991.148928","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148928","url":null,"abstract":"Deep dry etching of single-crystal silicon with IC-compatible masking materials for microstructure fabrication is reported. Reactive ion etching using chlorine/fluorine gases and positive photoresist mask produces up to 30 mu m deep silicon steps with vertical sidewalls. Plasma etching with fluorine/oxygen gas mixtures shows rather isotropic etch behavior; however, high selectivities of 20, 85, and greater than 300 for photoresist, silicon dioxide, and aluminum masks, respectively, permit etch depths of up to several hundreds of microns. Since these dry etching techniques are reproducible and controllable they indicate favorable features for application in silicon micromachining. Several examples are described: bipolar-compatible accelerometers where dry etching and KOH etching are combined, free-standing thin film microstructures (out of aluminum or silicon dioxide) realized by isotropic etching of the substrate, and thin silicon membranes fabricated by plasma etching.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132366621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Fabrication of microdiaphragm utilizing wafer direct bonding 利用晶圆直接键合技术制造微膜片
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148970
T. Fujii, Y. Gotoh, S. Kuroyanagi
{"title":"Fabrication of microdiaphragm utilizing wafer direct bonding","authors":"T. Fujii, Y. Gotoh, S. Kuroyanagi","doi":"10.1109/SENSOR.1991.148970","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148970","url":null,"abstract":"The process of fabricating a 100 mu m by 100 mu m microdiaphragm was developed through wafer direct bonding, preferential polishing for surface smoothing of the polysilicon embedded in the cavity, and anisotropic etching of [100] and [110] silicon wafers. By adapting the structure developed by this process to the pressure sensor, a small pressure sensor with perpendicular walls and independent pressure inlet ports provided in the back side of the chip was fabricated. The microdiaphragm of this structure minimizes fluctuations in element characteristics which can develop under the influence of excessive moisture, contamination, or other factors since the component side can be provided with a vacuum reference pressure chamber. One of the attractive features of the microdiaphragm pressure sensors mounted on a chip is that pressures of different levels can be measured since each has an independent pressure inlet port.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130445685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The role of additives in SnO/sub 2/ semiconductor gas sensors 添加剂在SnO/ sub2 /半导体气体传感器中的作用
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148826
Cheong Hae-Won, Choi， Jeong-Ja, H. kim, Kim Jong-Myong, Kim Jae-Mook
{"title":"The role of additives in SnO/sub 2/ semiconductor gas sensors","authors":"Cheong Hae-Won, Choi， Jeong-Ja, H. kim, Kim Jong-Myong, Kim Jae-Mook","doi":"10.1109/SENSOR.1991.148826","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148826","url":null,"abstract":"The effects of additives on the gas sensitivity to CH/sub 3/CN and CO are examined. The overall trends are similar in both gases. The Al-loaded SnO/sub 2/ sensor shows a slight increase in the sensitivity as compared with SnO/sub 2/. The Nb-loaded SnO/sub 2/ sensor decreases the sensitivity except in the low-temperature region. For CH/sub 3/, Pd does not appreciably improve the sensitivity in the low-temperature region in the sensors considered. However, the Pd-loaded SnO/sub 2/ enhances the sensitivity to CO in the low-temperature region. XPS studies suggest that the oxidation states of Pd are 4+ and 2+ with a relative ratio of 3:1.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130447157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Operation of harmonic side-drive micromotors studied through gear ratio measurements 通过测量传动比，研究了谐波侧驱微电机的运行
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148799
M. Mehregany, S. M. Phillips, E.T. Hsu, J. Lang
{"title":"Operation of harmonic side-drive micromotors studied through gear ratio measurements","authors":"M. Mehregany, S. M. Phillips, E.T. Hsu, J. Lang","doi":"10.1109/SENSOR.1991.148799","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148799","url":null,"abstract":"The detailed operation of variable capacitance harmonic (or wobble) side-drive micromotors was studied through gear ratio measurements. The gear ratio of the wobble micromotor is affected by wear in the bearing and by rotor slip. Rotor slip is a function of motive torque magnitude, excitation angle, and friction torques. The gear ratio of a wobble micromotor can be expressed as a constant term plus a term that accounts for rotor slip. The constant term is the nominal gear ratio which is equal to the bearing radius divided by the bearing clearance. The rotor slip term is directly proportional to the bushing friction torque and inversely proportional to the square of the excitation voltage. Micromotor operation in air as opposed to nitrogen demonstrates a significantly larger bushing friction torque.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133907667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 30
An integrated high-resolution optical angular displacement sensor 集成式高分辨率光学角位移传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148887
T. Kwa, R. Wolffenbuttel
{"title":"An integrated high-resolution optical angular displacement sensor","authors":"T. Kwa, R. Wolffenbuttel","doi":"10.1109/SENSOR.1991.148887","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148887","url":null,"abstract":"The sensor consists of a rotating element with reflective patterns fabricated onto it and a stationary part with optical detectors and readout circuitry, integrated in a standard BiFET IC process. High-resolution absolute angular position measurement is realized by combining the information of a high-resolution incremental analog sensor with that of a low-resolution absolute binary sensor. The high-resolution sensor part is implemented by a reflective zigzag pattern on the rotor and a position-sensitive device (PSD) on the stator. The low-resolution sensor part comprises a binary reflective code pattern on the rotor and a photodiode array on the stator. Angular displacement causes the code on the photodiode array to alternate and the reflected light spot on the PSD to move over the full length of the PSD in between each code transition. The sensor permits a contactless angular measurement over the full range of 360 degrees , without blocking at full scale. The sensor is insensitive to electric and magnetic fields and can be placed radially at any place on a rotating shaft.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134175286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Common two lead wires sensing system 常见的双引线传感系统
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148876
M. Esashi, Y. Matsumoto
{"title":"Common two lead wires sensing system","authors":"M. Esashi, Y. Matsumoto","doi":"10.1109/SENSOR.1991.148876","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148876","url":null,"abstract":"Sensing systems with many sensors connected to common two lead wires were studied. Two lead wires were used not only for supplying power but also for reading out the sensing signal and for accessing one of the connected sensors. Integrated circuits for addressing and integrated capacitance pressure sensors were developed for the system. The addressing unit was fabricated as a CMOS chip. Two types of sensing units for capacitive sensors were studied. A single capacitor type was fabricated as an integrated capacitive pressure sensor. A differential capacitor type was designed and the operation was verified with circuit simulation.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130877755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
Wide range pyroelectric anemometers for gas flow measurements 用于气体流量测量的宽量程热释电风速计
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148792
H. Hsieh, A. Spetz, J. Zemel
{"title":"Wide range pyroelectric anemometers for gas flow measurements","authors":"H. Hsieh, A. Spetz, J. Zemel","doi":"10.1109/SENSOR.1991.148792","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148792","url":null,"abstract":"Studies of pyroelectric anemometers (PAs) have demonstrated that these sensors have an extraordinarily wide operational range and excellent resolution. Measurements were conducted in two structures: a 3.3-mm-diameter pipe with an anemometer located in the center of the pipe and a 4.5-cm-diameter pipe with anemometers placed in the center and on the walls of the pipe. These measurements demonstrated that the PA can detect flows from approximately 1 mL/min to over 20 L/min in the 3.3-mm-diameter tube. Based on the measurements, It is concluded that the PA shows promise as a good flow transfer standard and as a candidate for monitoring extremely low flow rates.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133688090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Computer simulation of anisotropic crystal etching 各向异性晶体蚀刻的计算机模拟
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149005
C. Séquin
{"title":"Computer simulation of anisotropic crystal etching","authors":"C. Séquin","doi":"10.1109/SENSOR.1991.149005","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149005","url":null,"abstract":"The geometrical shapes resulting from anisotropic etching of crystalline substances are investigated. A simulator has been built that constructs boundary representations of the polyhedral models of such shapes starting from an etch rate polar diagram. Special attention is given to situations in which new faces emerge that were not previously present.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"258 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132754577","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 77
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