TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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A new sense element technology for accelerometer subsystems 加速度计子系统传感元件新技术
J. C. Cole
{"title":"A new sense element technology for accelerometer subsystems","authors":"J. C. Cole","doi":"10.1109/SENSOR.1991.148808","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148808","url":null,"abstract":"The author describes a capacitive accelerometer technology using sense element structures fabricated on the surface of a substrate or wafer. The sense element consists of an asymmetrically shaped flat plate of metal supported above a substrate surface by two torsion bars mounted on a central pedestal. The sense element is free to rotate around the torsion bars. Capacitor plates located on the substrate surface are used to detect the rotation. Fabrication of sense elements is done by selective electroforming in which a metal is electroplated onto a conductive substrate through a patterned photoresist layer. To produce suspended sense elements, the sense elements are fabricated partially on the top of a sacrificial spacer material deposited earlier. After the sense elements have been formed, the spacer material is then selectively etched, leaving the sense element supported only where it was formed directly on the substrate surface.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115441056","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Rapid determination of cellular metabolic rates with a silicon microphysiometer 用硅微生理计快速测定细胞代谢率
L. Bousse, D. L. Miller, J. Owicki, J. W. Parce
{"title":"Rapid determination of cellular metabolic rates with a silicon microphysiometer","authors":"L. Bousse, D. L. Miller, J. Owicki, J. W. Parce","doi":"10.1109/SENSOR.1991.148802","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148802","url":null,"abstract":"The microphysiometer is a silicon-sensor based instrument designed to measure the metabolic rates of small numbers of living cells. By improving the electronic noise level of this instrument, the authors have increased the temporal resolution of metabolic rate measurement by about an order of magnitude compared to previous versions of the instrument. This enables the study of relatively fast cellular responses to receptor/ligand binding. Results obtained with a cell line (TE671) that is known to contain acetylcholine receptors are presented. The kinetics of the cellular response to an acetylcholine agonist is shown to be complex, with three distinct resolvable phases. Through pharmacological manipulations it is demonstrated that the response is due to a muscarinic acetylcholine receptor.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128222201","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
A sensor powered by pulsed light (for gas density of GIS) 脉冲光驱动传感器(用于GIS气体密度)
Y. Yamagata, T. Kumagai, Y. Sai, Y. Uchida, K. Imai
{"title":"A sensor powered by pulsed light (for gas density of GIS)","authors":"Y. Yamagata, T. Kumagai, Y. Sai, Y. Uchida, K. Imai","doi":"10.1109/SENSOR.1991.149011","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149011","url":null,"abstract":"High optical/electrical energy conversion efficiency was achieved in an optical power supply system which drives a sensor by the optical energy supplied through an optical fiber cable from a laser diode, succeeding in supplying electric power over a distance of 1 km. By matching the impedances of load and of a photodiode, while converting pulsed light into electrical signals with the photodiode and boosting with a transformer, a high optical/electrical energy conversion efficiency of 14.8% was obtained. This power supply method was applied to a sensor for measuring the gas density of extrahigh-voltage substation gas-insulated switchgear (GIS) which can display the merits of an optical-transmission sensor. The sensor section of the gas density sensor, consisting of a transistor temperature sensor and a semiconductor pressure sensor, could be driven by an optical input of 2.3 mW.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128604273","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Fabrication and performance of a fully integrated mu -pirani pressure gauge with digital readout 带数字读数的全集成mu -pirani压力表的制造和性能
C. Mastrangelo, R. Muller
{"title":"Fabrication and performance of a fully integrated mu -pirani pressure gauge with digital readout","authors":"C. Mastrangelo, R. Muller","doi":"10.1109/SENSOR.1991.148848","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148848","url":null,"abstract":"A thermal absolute pressure sensor of the heated microbridge type has been integrated with an active bias circuit and an 8-bit successive-approximation register (SAR) analog-to-digital (A/D) converter. The chip, which contains about 1000 MOSFETs, measures absolute gas pressure between 10 to 10/sup 4/ Pa, and it is implemented in a 14-mask, 4- mu m NMOS technology merged with the microsensor process. The fabrication process and sensing performance of the mu -pirani gauge are described.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128970650","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 29
Cross-sectional TEM studies of heavily boron-doped silicon 重硼掺杂硅的横截面透射电镜研究
X. Ning, P. Pirouz, M. Mehregany, W. Chu
{"title":"Cross-sectional TEM studies of heavily boron-doped silicon","authors":"X. Ning, P. Pirouz, M. Mehregany, W. Chu","doi":"10.1109/SENSOR.1991.148992","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148992","url":null,"abstract":"The microstructure of heavily boron-doped silicon with a surface layer of borosilicate glass was compared with that of thermally oxidized boron-doped silicon. The microstructures and dislocation configurations were characterized by cross-sectional transmission electron microscopy using both strain contrast and phase contrast. No significant difference was found between the dislocation content and configuration of the two materials. However, the roughness of the oxide/p/sup +/ interface was very different in the two cases.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125649558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Design and modeling of a micromechanical surface bonding system 微机械表面粘接系统的设计与建模
H. Han, L. Weiss, M. Reed
{"title":"Design and modeling of a micromechanical surface bonding system","authors":"H. Han, L. Weiss, M. Reed","doi":"10.1109/SENSOR.1991.149053","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149053","url":null,"abstract":"Optimization of the design of a micromechanical surface fastening system is discussed based on a simple cantilevered beam model. Theoretical estimates indicate that the bonding strength of these microstructures can be as high as 11-17 MPa, or 1500-2000 psi. The equivalent surface energy corresponding to the stored strain energy during separation of two interlocked sample pairs is 14.6 mu J/cm/sup 2/. The authors also report preliminary experimental results; a bonding strength of 1.1 MPa or 160 psi per unit interlocked area has been achieved, which is in agreement with the theoretical approximation.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130447266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
Surface micromachined platforms using electroplated sacrificial layers 电镀牺牲层表面微加工平台
Y.W. Kim, M. Allen
{"title":"Surface micromachined platforms using electroplated sacrificial layers","authors":"Y.W. Kim, M. Allen","doi":"10.1109/SENSOR.1991.148964","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148964","url":null,"abstract":"A technique for the surface micromachining of structures suspended many tens of microns above a substrate surface is presented. Electroplated metal sacrificial layers are used in a standard surface micromachining process to achieve the necessary sacrificial layer thickness. The process is demonstrated using copper as the sacrificial layer and polyimide as the structural material. Surface micromachined bridges 8 mu m thick, 160 mu m long, and 100 mu m wide suspended over the surface from 10 to 50 mu m have been fabricated in this manner. In addition, movable platforms suspended 15 mu m above a surface over an area of 3*3 mm have also been demonstrated.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126850551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Development of pressure transducers utilizing deep X-ray lithography 利用深x射线光刻技术研制压力传感器
B. Choi, E. Lovell, H. Guckel, T. Christenson, K. Skrobis, J.W. Kang
{"title":"Development of pressure transducers utilizing deep X-ray lithography","authors":"B. Choi, E. Lovell, H. Guckel, T. Christenson, K. Skrobis, J.W. Kang","doi":"10.1109/SENSOR.1991.148894","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148894","url":null,"abstract":"Mechanical analysis and design of an improved class of differential pressure transducers is presented. Double-sided overload protection for a planar transducer is achieved with three-dimensional stops, produced with a process involving X-ray lithography and precision electroplating. Such metallic stops limit motion, suppress diaphragm stress, and facilitate the option of a second signal to verify performance. Computations indicate that the proposed device can generally sustain pressures substantially greater than those producing initial contact between the diaphragm and the metallic stops.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"254 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123264222","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
3-dimension pattern recognition using multiple beam projector 基于多光束投影仪的三维模式识别
O. Nishizaki, S. Aoyama, T. Yamashita
{"title":"3-dimension pattern recognition using multiple beam projector","authors":"O. Nishizaki, S. Aoyama, T. Yamashita","doi":"10.1109/SENSOR.1991.148986","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148986","url":null,"abstract":"The authors have developed a small ( Phi 8.4 mm) and light-weight (3.5 g) multiple beam projection (MBP) which is expected to be a novel light source for 3-D pattern recognition systems. The fabrication and assembly processes are described; experimental results are presented; and the advantages of the projector are enumerated.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123010279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
RGTO: a new technique for preparing SnO/sub 2/ sputtered thin film as gas sensors RGTO:制备SnO/ sub2 /溅射薄膜气体传感器的新技术
G. Sberveglieri, G. Faglia, S. Groppelli, P. Nelli
{"title":"RGTO: a new technique for preparing SnO/sub 2/ sputtered thin film as gas sensors","authors":"G. Sberveglieri, G. Faglia, S. Groppelli, P. Nelli","doi":"10.1109/SENSOR.1991.148829","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148829","url":null,"abstract":"A technique for the preparation of SnO/sub 2/ thin films by means of RF magnetron sputtering is presented. This technique, rheotaxial growth and thermal oxidation (RGTO), makes it possible to obtain thin films formed by polycrystalline grains, connected by necks and with high surface areas. SnO/sub 2/ thin films grown with this method and 300 nm thick show high sensitivity to such gases as H/sub 2/, C/sub 4/H/sub 10/, and C/sub 2/H/sub 5/OH. SEM (scanning electron microscope) analysis shows that these films are formed by grains with a diameter of 500-1500 mm which are randomly connected. XRD (X-ray diffraction) analysis shows that the SnO/sub 2/ thin films are preferentially oriented in the","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116595432","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
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