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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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A tactile stress rate sensor for perception of fine surface features 一种触觉应力率传感器，用于感知细微的表面特征
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149022
R. Howe
{"title":"A tactile stress rate sensor for perception of fine surface features","authors":"R. Howe","doi":"10.1109/SENSOR.1991.149022","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149022","url":null,"abstract":"The author reports the development of a new type of contact sensor for the measurement of fine surface features and textures down to the micron level. The sensor has a complicated rubber covering and is inexpensive and robust. As it is stroked across the surface of interest, piezoelectric transducers embedded in the sensor surface respond to stress induced by surface features. The sensor uses a current amplifier in place of the traditional charge amplifier, which eliminates many of the problems associated with piezoelectric transducers. The resulting signal is proportional to the rate of change of stress, or the stress rate. The signal can be interpreted with the aid of a solid mechanics model of the contact interaction and a linear deconvolution filter. The ability to detect features as small as a few micrometers has been experimentally confirmed. Intended applications include perception of surface properties to improve the robustness of robotic manipulation and rapid evaluation of surface finish in manufacturing.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121810205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 15
Microbubble powered actuator 微气泡动力致动器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149074
Liwei Lin, A. Pisano, A.P. Lee
{"title":"Microbubble powered actuator","authors":"Liwei Lin, A. Pisano, A.P. Lee","doi":"10.1109/SENSOR.1991.149074","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149074","url":null,"abstract":"A micromechanical, bubble-powered actuator is presented which can produce mechanical displacements as large as 140 mu m of a polysilicon actuator plate in a direction perpendicular to the substrate with as little as 8.4 mA input current. This device has been designed, fabricated, and successfully tested to have controllable displacement in a nonconducting liquid (Fluorinert FC43). The principle of actuation is the local heating of a polysilicon line resistor (immersed in liquid) in order to create a single, controllable microbubble that expands and lifts the actuator plate formed at the end of a microcantilever beam. The displacement of this actuator is stable and is controllable by adjusting the input current, which changes the bubble size and, subsequently, changes the actuator plate displacement. Linear beam theory has been used to calculate the displacement of the actuator plate and a simplified model has been used to explain the thermal behavior of the bubble.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124976651","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 35
A auto-calibrated microhole cathode array dissolved oxygen and ionic conductivity sensor 一种自动校准的微孔阴极阵列溶解氧离子电导率传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149038
Chen Yuquan, Li Guang, L. Weixue
{"title":"A auto-calibrated microhole cathode array dissolved oxygen and ionic conductivity sensor","authors":"Chen Yuquan, Li Guang, L. Weixue","doi":"10.1109/SENSOR.1991.149038","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149038","url":null,"abstract":"A novel miniature auto-calibrated dissolved oxygen and ionic conductivity sensor has been developed. This sensor consists of two gold working electrodes, a Ag/AgCl reference electrode, a gold counter-electrode, and a Pt thermal resistant. It operates in a three-electrode potentiostatic mode. The two working electrodes have a multiple-cathode array separately. One is used for the measurement of oxygen and the other is used for calibration. The two working electrodes can also be used to measure the conductance of a solution by switching the sensor to the conductance measurement circuit. Evaluation of the sensor characteristics was undertaken and the results are promising. Calibration of the sensor was performed over the oxygen concentration range of 3-16 p.p.m. in a 0.1 N-1 N KCl solution in the 12-25 degrees C temperature range and at 760 torr pressure. A linear relationship is observed.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125312406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A novel organophosphorus pesticides sensitive EN-FET 一种新型有机磷农药敏感EN-FET
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148979
Y. Yi, H. Mei, W. Wlodarski, Ji Xing Song
{"title":"A novel organophosphorus pesticides sensitive EN-FET","authors":"Y. Yi, H. Mei, W. Wlodarski, Ji Xing Song","doi":"10.1109/SENSOR.1991.148979","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148979","url":null,"abstract":"The authors describe a novel organophosphorus pesticide sensitive solid-state sensor, the enzyme modified field-effect transistor (EN-FET), for measurements in liquid media, based on the immobilized enzyme probe (IEP) technique using butyrylcholinesterase. The pH-EISFET with n-channel and silicon dioxide/silicon nitride insulator layers is used as the transducer. Butyrylcholinesterase has been covalently bound onto the gate of pH-ISFET (ion-sensitive FET) using glutaraldehyde and the bovine serum albumin. The organophosphorous pesticide sensitive EN-FET has the advantage of fast response.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130125357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Smallest dead volume microvalves for integrated chemical analyzing systems 用于集成化学分析系统的最小死体积微阀
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149077
S. Shoji, B. van der Schoot, N. D. de Rooij, M. Esashi
{"title":"Smallest dead volume microvalves for integrated chemical analyzing systems","authors":"S. Shoji, B. van der Schoot, N. D. de Rooij, M. Esashi","doi":"10.1109/SENSOR.1991.149077","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149077","url":null,"abstract":"Normally open, normally closed, and three-way microvalves were developed. These microvalves had a simple structure and small dead volume on the order of tens of nl. Each microvalve was driven by a stack-type piezo-actuator and the controllable flow range is from 1 mu l/min to tens of mu l/min. These valves are useful for constructing integrated chemical analyzing systems.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122714339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 48
A parallel signal processing technique using MOS current-mode analog circuits for smart image sensors 基于MOS电流模模拟电路的智能图像传感器并行信号处理技术
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148875
S. Kawahito, J. Takahashi, M. Ashiki, T. Nakamura
{"title":"A parallel signal processing technique using MOS current-mode analog circuits for smart image sensors","authors":"S. Kawahito, J. Takahashi, M. Ashiki, T. Nakamura","doi":"10.1109/SENSOR.1991.148875","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148875","url":null,"abstract":"A parallel signal processing technique using MOS current-mode analog circuits for three-dimensional smart image sensors is proposed. The designed signal processing circuits for contour extraction require 79 transistors for each pixel. Prototype CMOS integrated circuits have been designed and the typical operation has been simulated by the SPICE program. The CMOS current-mode analog circuits are particularly suitable for the implementation of specific kinds of image processing such as linear special filtering.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131275551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Design considerations of a digital pressure sensor array 数字压力传感器阵列的设计考虑
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148871
R. Bower, M.S. Ismail
{"title":"Design considerations of a digital pressure sensor array","authors":"R. Bower, M.S. Ismail","doi":"10.1109/SENSOR.1991.148871","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148871","url":null,"abstract":"A digital pressure sensor array is described which is designed using aligned wafer bonding. The array produces a digital output describing the pressure differential range in the interval of 0.25 to 1.0 atmospheres of pressure. The digital pressure sensors operate on the principle of closing electrical contacts at desired pressure points.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133501465","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Characteristics and analysis of a-Si:H color-sensitive photodetectors a-Si:H色敏光电探测器的特性与分析
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148861
Jyh-Wong Hong, Nerng-Fu Shin, Yean-Fen Wu, T. Jen, Chun-Yen Chang
{"title":"Characteristics and analysis of a-Si:H color-sensitive photodetectors","authors":"Jyh-Wong Hong, Nerng-Fu Shin, Yean-Fen Wu, T. Jen, Chun-Yen Chang","doi":"10.1109/SENSOR.1991.148861","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148861","url":null,"abstract":"A novel a-Si:H photodetector has been demonstrated. The advantages of this photodetector include a voltage-adjustable sensitive-wavelength range, which has been confirmed by simulation results, and a lower sub-peak spectral response. The performances of the successfully fabricated a-Si:H color-sensitive photodetectors, processing a minimum FWHM (full width at half maximum) of 600 AA in its spectral responses and with the basic structure of Al/n/sup +/-i-p/sup +/-i-n-i-p-i-n/sup +//ITO(indium tin oxide)/glass, have been quantitatively fitted by the theoretical analysis. The simple model presented can be used to explain the color-sensitive features observed experimentally for the proposed photodetectors.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114315472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Pyroelectric PbTiO/sub 3/ thin films for microsensor applications 微传感器用热释电PbTiO/ sub3 /薄膜
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149033
C. Ye, T. Tamagawa, D. Polla
{"title":"Pyroelectric PbTiO/sub 3/ thin films for microsensor applications","authors":"C. Ye, T. Tamagawa, D. Polla","doi":"10.1109/SENSOR.1991.149033","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149033","url":null,"abstract":"Pyroelectric lead titanate thin films (PbTiO/sub 3/) deposited by sol-gel processing have been characterized for possible use in microsensor applications. Pyroelectric properties, crystalline phase, dielectric coefficient, and ferroelectric properties have been investigated. The measured room-temperature pyroelectric coefficient in 0.6- mu m-thick films is 90 nC/cm/sup 2/-K. Based on a comparison of relevant properties with other IC-compatible pyroelectric materials, PbTiO/sub 3/ offers the possibility of achieving an extremely high pyroelectric coefficient over a wide operating temperature range. The authors present the use of PbTiO/sub 3/ as a pyroelectric material integrated with polysilicon microbridge technology. The formation of composite sol-gel PbTiO/sub 3/ thin films on 1.0- mu m-thick polysilicon membranes offers a key advantage of implementing both a low thermal mass and a high pyroelectric sensitivity for uncooled infrared detection.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114345568","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Nonlinear optics for transducers: principles and materials 非线性光学传感器:原理和材料
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148982
H. Hoekstra, G. Krijnen, A. Driessen, P. Lambeck, T. Popma
{"title":"Nonlinear optics for transducers: principles and materials","authors":"H. Hoekstra, G. Krijnen, A. Driessen, P. Lambeck, T. Popma","doi":"10.1109/SENSOR.1991.148982","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148982","url":null,"abstract":"Intensity-dependent refractive index changes due to the third-order optical nonlinearity are examined. Materials exhibiting such effects are good candidates for applications in all-optical devices. Consideration is given to these materials, characterization techniques, and proposed all-optical devices. Of the latter the nonlinear Y-junction is treated in considerable detail.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115450441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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