{"title":"Pyroelectric PbTiO/sub 3/ thin films for microsensor applications","authors":"C. Ye, T. Tamagawa, D. Polla","doi":"10.1109/SENSOR.1991.149033","DOIUrl":null,"url":null,"abstract":"Pyroelectric lead titanate thin films (PbTiO/sub 3/) deposited by sol-gel processing have been characterized for possible use in microsensor applications. Pyroelectric properties, crystalline phase, dielectric coefficient, and ferroelectric properties have been investigated. The measured room-temperature pyroelectric coefficient in 0.6- mu m-thick films is 90 nC/cm/sup 2/-K. Based on a comparison of relevant properties with other IC-compatible pyroelectric materials, PbTiO/sub 3/ offers the possibility of achieving an extremely high pyroelectric coefficient over a wide operating temperature range. The authors present the use of PbTiO/sub 3/ as a pyroelectric material integrated with polysilicon microbridge technology. The formation of composite sol-gel PbTiO/sub 3/ thin films on 1.0- mu m-thick polysilicon membranes offers a key advantage of implementing both a low thermal mass and a high pyroelectric sensitivity for uncooled infrared detection.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"32 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.149033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Pyroelectric lead titanate thin films (PbTiO/sub 3/) deposited by sol-gel processing have been characterized for possible use in microsensor applications. Pyroelectric properties, crystalline phase, dielectric coefficient, and ferroelectric properties have been investigated. The measured room-temperature pyroelectric coefficient in 0.6- mu m-thick films is 90 nC/cm/sup 2/-K. Based on a comparison of relevant properties with other IC-compatible pyroelectric materials, PbTiO/sub 3/ offers the possibility of achieving an extremely high pyroelectric coefficient over a wide operating temperature range. The authors present the use of PbTiO/sub 3/ as a pyroelectric material integrated with polysilicon microbridge technology. The formation of composite sol-gel PbTiO/sub 3/ thin films on 1.0- mu m-thick polysilicon membranes offers a key advantage of implementing both a low thermal mass and a high pyroelectric sensitivity for uncooled infrared detection.<>