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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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A micromachined flow sensor for measuring small liquid flows 一种用于测量小液体流量的微机械流量传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148793
J. Branebjerg, O. Jensen, N.G. Laursen, O. Leistiko, H. Soeberg
{"title":"A micromachined flow sensor for measuring small liquid flows","authors":"J. Branebjerg, O. Jensen, N.G. Laursen, O. Leistiko, H. Soeberg","doi":"10.1109/SENSOR.1991.148793","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148793","url":null,"abstract":"A flow sensor for measuring small liquid flows in chemical measurement systems has been fabricated using bulk silicon micromachining techniques. The liquid flow sensor utilizes the measurement principle of thermal transit time, where a heat pulse is injected into the liquid and the velocity of the heat pulse is measured. The sensor consists of a silicon wafer mounted between two glass plates. A flow channel is anisotropically etched into the front side of the wafer, and on the back side electrical components for heat delivery and temperature detection are made. The flow sensor shows excellent accuracy, speed, and long-term stability. Due to the well-defined geometry easily obtainable in this technology, the mechanical, thermal, and flow properties of the flow sensor are very reproducible. There is firm mechanical insulation between the fluid system and the electrical parts of the sensor. Good thermal coupling between the fluid and the temperature controlling components is ensured, since silicon is an excellent heat conductor.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123460073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 25
Fabrication of a subminiature silicon condenser microphone using the sacrificial layer technique 用牺牲层技术制备微型硅电容传声器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148898
P. Scheeper, W. Olthuis, P. Bergveld
{"title":"Fabrication of a subminiature silicon condenser microphone using the sacrificial layer technique","authors":"P. Scheeper, W. Olthuis, P. Bergveld","doi":"10.1109/SENSOR.1991.148898","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148898","url":null,"abstract":"The application of the sacrificial layer technique for the fabrication of a subminiature silicon condenser microphone with a plasma-enhanced chemical vapor deposited silicon nitride diaphragm has been investigated. Square diaphragms with dimensions from 0.6 to 2.6 mm and a thickness of 1 mu m have been realized. Measurements on a microphone with a 2*2 mm diaphragm and a 1 mu m airgap have shown that a sensitivity of 1.4 mV/Pa for low frequencies can be achieved with a low bias voltage (-2 V). The sensitivity decreases for high frequencies. This effect is probably due to the small airgap. Therefore, microphones with wider airgaps have to be developed to achieve a flat frequency response for the entire audio frequency range.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123592536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 27
Chemical and physical sensors based on oxygen pumping with solid state electrochemical cells 基于固态电化学电池抽氧的化学和物理传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148881
E. Logothetis, J. Visser, R. Soltis, L. Rimai
{"title":"Chemical and physical sensors based on oxygen pumping with solid state electrochemical cells","authors":"E. Logothetis, J. Visser, R. Soltis, L. Rimai","doi":"10.1109/SENSOR.1991.148881","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148881","url":null,"abstract":"The authors discuss the use of the oxygen pumping principle with ZrO/sub 2/ solid-state electrochemical cells to generate a variety of sensors for measuring chemical species such as oxygen, CO, hydrocarbons, and H/sub 2/O, as well as physical parameters such as gas pressure and flow. Laboratory results on the behavior of some of these sensors are also presented. The variety of devices discussed shows the versatility of the oxygen pumping principle in realizing unique sensors. Although most of these are basically chemical sensors, it is possible in some cases to also generate sensors for physical variables such as gas pressure and flow.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124818028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Resonant beam pressure sensor fabricated with silicon fusion bonding 硅熔合制备的谐振束压力传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148968
K. Petersen, F. Pourahmadi, J. Brown, P. Parsons, M. Skinner, J. Tudor
{"title":"Resonant beam pressure sensor fabricated with silicon fusion bonding","authors":"K. Petersen, F. Pourahmadi, J. Brown, P. Parsons, M. Skinner, J. Tudor","doi":"10.1109/SENSOR.1991.148968","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148968","url":null,"abstract":"A resonant pressure sensor has been fabricated which consists of a single-crystal silicon beam located in the center of a single-crystal silicon diaphragm. The beam is excited electrostatically and its motion are detected by piezoresistors. The structure is fabricated with silicon fusion bonding. Overall measurement accuracies of 0.01% have been achieved. This sensor has been designed to meet the exacting standards required for aerospace air data computers and engine control applications where achievable accuracies of 0.1% absolute pressure are required. The principle of operation is imply to measure the change in resonant frequency of a micromachined silicon beam as the pressure exerted on the sensor's diaphragm is changed.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124944322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 89
A three-dimensional neural recording array 三维神经记录阵列
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148816
A. Hoogerwerf, K. Wise
{"title":"A three-dimensional neural recording array","authors":"A. Hoogerwerf, K. Wise","doi":"10.1109/SENSOR.1991.148816","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148816","url":null,"abstract":"The authors describe a three-dimensional recording array for the high-density monitoring of neural activity throughout a volume of cortical tissue. The microassembly techniques used permit multiple multishank planar probes to be precisely configured to form 3D microstructures with probe spacings of 100 mu m or less. The probes are aligned through an orthogonal platform, also formed by silicon micromachining. High-density lead transfers between the probes and the platform are formed by selective electroplating and offer very low values of series resistance and shunt capacitance, with center-to-center lead spacings of 100 mu m or less. A 4*4 shank passive probe array has been found to penetrate pia arachnoid easily and is well accepted by the neural tissue. These assembly techniques also appear to be compatible with a variety of other microelectromechanical systems where 3D structures are required.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"298 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122965785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 23
Combined measurement of surface potential and zeta potential at insulator/electrolyte interfaces 绝缘体/电解质界面表面电位和ζ电位的组合测量
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148922
L. Bousse, S. Mostarshed, D. Hafeman
{"title":"Combined measurement of surface potential and zeta potential at insulator/electrolyte interfaces","authors":"L. Bousse, S. Mostarshed, D. Hafeman","doi":"10.1109/SENSOR.1991.148922","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148922","url":null,"abstract":"Simultaneous measurements of relative surface potential and zeta potential, as monitored by streaming potential measurement, were made at the interface between Si/sub 3/N/sub 4/ (on a semiconductor substrate) and aqueous electrolytes of varied pH. The light-addressable-potentiometric-sensor (LAPS) technique was used to make the simultaneous measurements. The results indicate the zero zeta potential occurred at an electrolyte pH of 3.1. Upon changing pH, approximately 10% of the surface potential change also appeared as a change in zeta potential.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129588621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Silicon-microactuators: activation mechanisms and scaling problems 硅微致动器:激活机制和缩放问题
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148794
W. Benecke
{"title":"Silicon-microactuators: activation mechanisms and scaling problems","authors":"W. Benecke","doi":"10.1109/SENSOR.1991.148794","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148794","url":null,"abstract":"Different types of electromechanical microactuators are described and discussed with respect to their most important characteristics (i.e. conversion efficiency, displacement, force, torque, etc.) and power consumption. Different actuation principles can be adapted to IC and micromachining technologies with specific potentials in device miniaturization. An overall evaluation of the different concepts is strongly linked to the specific applications and to the system requirements. Different types of electromechanical silicon microactuators have specific advantages and disadvantages with respect to deflection, force, power consumption, and response time. Some of the conversion principles, especially electrostatically driven structures, offer outstanding qualities with an increasing degree of miniaturization.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129594074","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
Novel three-terminal photosensitive thyristors and optically-controlled gates 新型三端光敏晶闸管及光控门
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149016
Zhu Chang-chun, Kang Xue-jun, Lui Jun-Hua
{"title":"Novel three-terminal photosensitive thyristors and optically-controlled gates","authors":"Zhu Chang-chun, Kang Xue-jun, Lui Jun-Hua","doi":"10.1109/SENSOR.1991.149016","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149016","url":null,"abstract":"Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125082229","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Array-driven ultrasonic microactuators 阵列驱动超声微致动器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149078
T. Furuhata, T. Hirano, H. Fujita
{"title":"Array-driven ultrasonic microactuators","authors":"T. Furuhata, T. Hirano, H. Fujita","doi":"10.1109/SENSOR.1991.149078","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149078","url":null,"abstract":"The authors present the design of an array-driven ultrasonic microactuator. Unlike a conventional ultrasonic motor, the array-driven ultrasonic microactuator consists of many distributed modules, using a concept similar to that of the distributed microactuator array. With a conventional ultrasonic motor, it is difficult to control an object locally and to obtain sufficient resolution of the rotor position and orientation without closed-loop control, since the motion of the rotor is produced by traveling waves on the whole diaphragm. However, an array-driven ultrasonic microactuator can control the motion with high accuracy even in open-loop control, because it can control the motion of each distributed module. It uses perpendicular motion, which is suitable for an electrostatic-force-type actuator. Perpendicular motions produced by two transducers in each module are mechanically transformed into circular motion, and a set of circular motions of the micromodules induces motion in the object.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130150900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Silicon sensors for automotive applications 汽车用硅传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148830
R. E. Sulouff
{"title":"Silicon sensors for automotive applications","authors":"R. E. Sulouff","doi":"10.1109/SENSOR.1991.148830","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148830","url":null,"abstract":"The author examines the strategic, economic, and technological considerations for silicon sensors for automotive applications. The view toward the 1990s as the decade of increased silicon sensors for automotive applications is examined in light of the economic and technological tradeoffs. It is pointed out that silicon sensors have demonstrated their value as Hall effect and pressure sensors for more than ten years and several hundred applications. The pressure sensor opportunities are continuing to grow and provide a technological base for growth in silicon accelerometers.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128876441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
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