{"title":"新型三端光敏晶闸管及光控门","authors":"Zhu Chang-chun, Kang Xue-jun, Lui Jun-Hua","doi":"10.1109/SENSOR.1991.149016","DOIUrl":null,"url":null,"abstract":"Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel three-terminal photosensitive thyristors and optically-controlled gates\",\"authors\":\"Zhu Chang-chun, Kang Xue-jun, Lui Jun-Hua\",\"doi\":\"10.1109/SENSOR.1991.149016\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<<ETX>>\",\"PeriodicalId\":273871,\"journal\":{\"name\":\"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.1991.149016\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.149016","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Novel three-terminal photosensitive thyristors and optically-controlled gates
Novel dual-intercontrolled photosensitive thyristors based on the lateral interaction effect between two current-controlled negative resistance switches with a metal/insulator (tunnel)/n-p/sup +/ semiconductor (MINP) four-layer structure have been developed. The thyristor consists of two MIS switches. Their electrical and optical characteristics and fabrication process are reported. These devices have been further developed to be optically controlled AND/OR gates.<>