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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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Electrostatic parallelogram actuators 静电平行四边形致动器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148800
N. Takeshima, K. J. Gabriel, M. Ozaki, J. Takahashi, H. Horiguchi, Hiroyuki Fujita
{"title":"Electrostatic parallelogram actuators","authors":"N. Takeshima, K. J. Gabriel, M. Ozaki, J. Takahashi, H. Horiguchi, Hiroyuki Fujita","doi":"10.1109/SENSOR.1991.148800","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148800","url":null,"abstract":"Surface micromachined actuators composed of polysilicon, parallelogram flexible supports are described. The parallelogram actuators transform both the direction and the magnitude of the attractive, electrostatic force developed between the drive electrodes. In a typical configuration, one vertex of the parallelogram is fixed, two opposing, suspended vertices are pulled by the attractive electrostatic force, and the fourth, suspended vertex moves towards the fixed vertex. Parallelogram actuators with beam lengths of 200 approximately 600 mu m and beam widths of 2 approximately 7 mu m were fabricated in 4- mu m-thick LPCVD (low-pressure chemical vapor deposited) polysilicon. Best device yields were obtained when a t-butyl alcohol freeze-dry rinse was used. A parallelogram actuator with 283- mu m-length and 2.5- mu m-width beams moved repeatably and showed 5- mu m displacement by an applied voltage of 19 V.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123767220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 73
Oil-damped piezoresistive silicon accelerometers 油阻尼压阻硅加速度计
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148813
N. D. de Rooij, T. Tschan, A. Bezinge
{"title":"Oil-damped piezoresistive silicon accelerometers","authors":"N. D. de Rooij, T. Tschan, A. Bezinge","doi":"10.1109/SENSOR.1991.148813","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148813","url":null,"abstract":"The characteristics of a 50 g piezoresistive accelerometer are reported. Two different but complementary techniques have been combined in an attempt to achieve a usable product, standard silicon micromachining for the sensitive element and encapsulation in a stainless steel housing filled up with oil. Using oil instead of gas for the damping is more efficient, due to its large viscosity value. Distances for critical damping are one order of magnitude larger, but the sensitivity and the resonance frequency decrease by a factor of two. The major drawback of the oil is the dependence of its viscosity upon temperature. This results in a 10 dB variation of the amplitude at the resonance frequency over a 100 degrees C temperature range. This type of accelerometer might be useful for applications with a restricted temperature range or with a low frequency range.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126985800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Analytical 2D-model of CMOS micromachined gas flow sensors CMOS微加工气体流量传感器解析二维模型
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148788
G. Wachutka, R. Lenggenhager, D. Moser, H. Baltes
{"title":"Analytical 2D-model of CMOS micromachined gas flow sensors","authors":"G. Wachutka, R. Lenggenhager, D. Moser, H. Baltes","doi":"10.1109/SENSOR.1991.148788","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148788","url":null,"abstract":"An analytical 2D model for the theoretical treatment of thermoelectric or thermoresistive integrated gas flow sensors is presented. It allows a detailed understanding and quantitative description of the function of cantilever beam and microbridge sensor structures fabricated using standard CMOS technology followed by an additional etching step. The heat exchange between the solid and the ambient gas along the surface of the respective sensor element is described by a generalized heat transport equation for the spatial temperature distribution. Only a small portion of the Joule heat produced by the integrated heating resistors is transferred to the gas, while the main stream of heat is conducted through the sandwich structure to the bulk silicon. However, there is a significant temperature modulation in the vicinity of the sensor surface, and it is this effect which makes the sensor work. In spite of the simplifying assumptions made, the model reproduces all essential features of the experimental findings and thus may be used to optimize the sensor design.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116464491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 22
Kinematic analysis of precision planar manipulator on silicon 硅基精密平面机械手的运动学分析
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148954
K. Kosuge, T. Fukuda, M. Mehregany
{"title":"Kinematic analysis of precision planar manipulator on silicon","authors":"K. Kosuge, T. Fukuda, M. Mehregany","doi":"10.1109/SENSOR.1991.148954","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148954","url":null,"abstract":"A control architecture for the precision planar link mechanism on silicon, the semi-closed-loop feedback system, is proposed. Each joint is controlled in an open-loop manner using a stepping micromotor. The positioning accuracy of the control system depends on the kinematics of the mechanism, since no feedback loops concerned with the controlled variables exist. To investigate the feasibility of the control system, several kinematic issues are analyzed. The authors solve the inverse kinematic problem for this mechanism. They discuss the effect of joint clearances on the positioning accuracy on the platform. They derive the relation between the actuator resolutions and the attainable positioning accuracy of the platform. The final result revealed the tradeoff relation between the positioning accuracy of the platform and its working area. Since the necessary output torque also depends on the selection of kinematic parameters of the system, the design of micromechanical systems should be done based on the tradeoff relations among the actuator torques, positioning accuracies, working area, etc.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125840891","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutions 硅在(CH/sub 3/)/sub 4/NOH溶液中的各向异性蚀刻
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149007
O. Tabata, R. Asahi, H. Funabashi, S. Sugiyama
{"title":"Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutions","authors":"O. Tabata, R. Asahi, H. Funabashi, S. Sugiyama","doi":"10.1109/SENSOR.1991.149007","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149007","url":null,"abstract":"Detailed characteristics of tetramethyl ammoniumhydroxide, (CH/sub 3/)/sub 4/NOH, as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% have been studied. The etch rates of","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126867641","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Integrated monochromator fabricated in silicon using micromachining techniques 利用微加工技术在硅中制造集成单色仪
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149013
R. Wolffenbuttel, T. Kwa
{"title":"Integrated monochromator fabricated in silicon using micromachining techniques","authors":"R. Wolffenbuttel, T. Kwa","doi":"10.1109/SENSOR.1991.149013","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149013","url":null,"abstract":"Silicon bulk micromachining techniques have been employed to fabricate a fully integrated grating monochromator in silicon for operation in the visible and near-infrared spectral range. Two wafers are machined in such a way that an optical path of about 4 mm length is obtained in which dispersed light from a 32-slit diffraction grating is projected onto an array of photodiodes. The wafers are subjected to an electrochemically controlled etch. The interior of one of the wafers is subsequently coated with a reflective film. The grating, the array of photodetectors, and the readout circuits are integrated in the second wafer, which remains uncoated. The wafers can be bonded using the direct silicon-to-silicon fusion bonding technique. The functional division into a reflective wafer and a grating/readout wafer greatly simplifies the integration of the complete monochromator in a smart silicon sensor.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127810823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The electrohydrodynamic micro flow meter 电流体动力微流量计
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149042
A. Richter, K. Hofmann, A. Plettner, H. Sandmaier
{"title":"The electrohydrodynamic micro flow meter","authors":"A. Richter, K. Hofmann, A. Plettner, H. Sandmaier","doi":"10.1109/SENSOR.1991.149042","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149042","url":null,"abstract":"A method for the measurement of fluid flow and velocity was developed. It is based on the structure of a micromachined electrohydrodynamic (EHD) injection pump. This technique is especially suited for small flow rates from 100 ml/min down to the sub- mu l/min range, which is difficult to measure by known methods. The method presented is based on the measurement of the ion transit time between two grids. Upon application of a step voltage between the grids a cusp is observed in the associated transient space-charge-limited current. The cusp signifies the arrival of the first charge carriers at the opposite electrode and hence the ion transit time. The transit time increases or decreases depending on the flow rate and direction and is therefore a direct measure of the fluid flow rate. This behavior was inferred from 1-D calculations and subsequently confirmed by experiments. Volumetric flow rates down to 8 mu l/min were measured with a 2.5*2.5 mm/sup 2/ grid area.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129048890","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Ambient hydrogen chloride sensing with a zinc-coated piezoelectric crystal resonator 环境氯化氢传感与镀锌压电晶体谐振器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148946
G.G. Neuberger
{"title":"Ambient hydrogen chloride sensing with a zinc-coated piezoelectric crystal resonator","authors":"G.G. Neuberger","doi":"10.1109/SENSOR.1991.148946","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148946","url":null,"abstract":"The author discusses a simple yet reliable scheme for the selective and sensitive detection of gaseous HCl utilizing a zinc-coated quartz-crystal resonator as the sensing element in a piezoelectric microbalance operating in a frequency-time differential mode. Detection is based on the rapid formation of the hygroscopic ZnCl/sub 2/ salt with the concomitant uptake of water for ambient relative humidities greater than 10%. The sensitivity ratio for detection of HCl as compared to other common ambient gases is 100:1 or greater. The author also discusses the results of small-scale fire tests, conducted in a telecommunications central office (CO), that demonstrate the benefits derived from ambient HCl sensing with an emphasis on the comparison of the response to commercial fire/smoke detection methods. Studies conducted in several COs have shown that sensor lifetime is expected to exceed about three years.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129167134","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
The effect of corner radius of curvature on the mechanical strength of micromachined single-crystal silicon structures 弯角曲率半径对微加工单晶硅结构机械强度的影响
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148836
F. Pourahmadi, D. Gee, K. Petersen
{"title":"The effect of corner radius of curvature on the mechanical strength of micromachined single-crystal silicon structures","authors":"F. Pourahmadi, D. Gee, K. Petersen","doi":"10.1109/SENSOR.1991.148836","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148836","url":null,"abstract":"The burst pressure of typical diaphragm structures is measured for devices that have various radii of curvature at the sharp corner. When pressure is applied to the etched side of the diaphragm, burst pressure is increased by over 50% in devices with radii of curvature as little as 0.2 mu m compared to devices with no measurable radii of curvature. Devices with radii of curvature of 1.5 mu m have burst pressures that are 5* higher than those manufactured with customary methods. Finite element submodeling has been used to simulate the test results, and the models estimate the fracture strength of (100) silicon wafers at 990 kpsi in the (110) direction.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116884298","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 34
Influence of the gate insulator on gas measurements with suspended gate FETs 栅极绝缘子对悬浮栅场效应管气体测量的影响
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.149058
F. Topart, B. Flietner, M. Josowicz, M. Leu, H. Lorenz, M. Peschke, H. Riess, I. Eisele
{"title":"Influence of the gate insulator on gas measurements with suspended gate FETs","authors":"F. Topart, B. Flietner, M. Josowicz, M. Leu, H. Lorenz, M. Peschke, H. Riess, I. Eisele","doi":"10.1109/SENSOR.1991.149058","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.149058","url":null,"abstract":"An attempt is made to separate the relative contributions to the threshold voltage shift of the layers composing a suspended gate FET (SGFET). For that purpose the insulators silicon nitride and diamondlike (a-C:H) films, as well as the sputtered SnO/sub 2/ and Ti/W, active layers have been investigated. The gas-surface interaction has been characterized by carrying out simultaneous measurements of mass changes (quartz crystal microbalance) and work function shifts (Kelvin probe). It is shown that the threshold voltage shift of SGFETs, composed of various insulator/active layer combinations, is a superposition of the independently measured work function shifts.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131533729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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