{"title":"利用微加工技术在硅中制造集成单色仪","authors":"R. Wolffenbuttel, T. Kwa","doi":"10.1109/SENSOR.1991.149013","DOIUrl":null,"url":null,"abstract":"Silicon bulk micromachining techniques have been employed to fabricate a fully integrated grating monochromator in silicon for operation in the visible and near-infrared spectral range. Two wafers are machined in such a way that an optical path of about 4 mm length is obtained in which dispersed light from a 32-slit diffraction grating is projected onto an array of photodiodes. The wafers are subjected to an electrochemically controlled etch. The interior of one of the wafers is subsequently coated with a reflective film. The grating, the array of photodetectors, and the readout circuits are integrated in the second wafer, which remains uncoated. The wafers can be bonded using the direct silicon-to-silicon fusion bonding technique. The functional division into a reflective wafer and a grating/readout wafer greatly simplifies the integration of the complete monochromator in a smart silicon sensor.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Integrated monochromator fabricated in silicon using micromachining techniques\",\"authors\":\"R. Wolffenbuttel, T. Kwa\",\"doi\":\"10.1109/SENSOR.1991.149013\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Silicon bulk micromachining techniques have been employed to fabricate a fully integrated grating monochromator in silicon for operation in the visible and near-infrared spectral range. Two wafers are machined in such a way that an optical path of about 4 mm length is obtained in which dispersed light from a 32-slit diffraction grating is projected onto an array of photodiodes. The wafers are subjected to an electrochemically controlled etch. The interior of one of the wafers is subsequently coated with a reflective film. The grating, the array of photodetectors, and the readout circuits are integrated in the second wafer, which remains uncoated. The wafers can be bonded using the direct silicon-to-silicon fusion bonding technique. The functional division into a reflective wafer and a grating/readout wafer greatly simplifies the integration of the complete monochromator in a smart silicon sensor.<<ETX>>\",\"PeriodicalId\":273871,\"journal\":{\"name\":\"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.1991.149013\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.149013","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integrated monochromator fabricated in silicon using micromachining techniques
Silicon bulk micromachining techniques have been employed to fabricate a fully integrated grating monochromator in silicon for operation in the visible and near-infrared spectral range. Two wafers are machined in such a way that an optical path of about 4 mm length is obtained in which dispersed light from a 32-slit diffraction grating is projected onto an array of photodiodes. The wafers are subjected to an electrochemically controlled etch. The interior of one of the wafers is subsequently coated with a reflective film. The grating, the array of photodetectors, and the readout circuits are integrated in the second wafer, which remains uncoated. The wafers can be bonded using the direct silicon-to-silicon fusion bonding technique. The functional division into a reflective wafer and a grating/readout wafer greatly simplifies the integration of the complete monochromator in a smart silicon sensor.<>