硅在(CH/sub 3/)/sub 4/NOH溶液中的各向异性蚀刻

TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI:10.1109/SENSOR.1991.149007

O. Tabata, R. Asahi, H. Funabashi, S. Sugiyama

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引用次数: 11

摘要

研究了四甲基氢氧化铵(CH/ sub3 /)/ sub4 /NOH作为硅各向异性蚀刻溶液在5 ~ 40 wt.%浓度范围内的详细特性。的蚀刻速率

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Anisotropic etching of silicon in (CH/sub 3/)/sub 4/NOH solutions

Detailed characteristics of tetramethyl ammoniumhydroxide, (CH/sub 3/)/sub 4/NOH, as silicon anisotropic etching solutions with various concentrations from 5 to 40 wt.% have been studied. The etch rates of

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来源期刊

TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers

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