栅极绝缘子对悬浮栅场效应管气体测量的影响

TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI:10.1109/SENSOR.1991.149058

F. Topart, B. Flietner, M. Josowicz, M. Leu, H. Lorenz, M. Peschke, H. Riess, I. Eisele

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引用次数: 1

摘要

本文尝试分离构成悬栅场效应管(SGFET)的各层对阈值电压漂移的相对贡献。为此，研究了氮化硅和类金刚石(a-C:H)薄膜以及溅射的SnO/ sub2 /和Ti/W活性层。通过同时测量质量变化(石英晶体微天平)和功函数位移(开尔文探针)来表征气-表面相互作用。结果表明，由各种绝缘子/有源层组合组成的sgfet的阈值电压位移是独立测量的功函数位移的叠加。

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Influence of the gate insulator on gas measurements with suspended gate FETs

An attempt is made to separate the relative contributions to the threshold voltage shift of the layers composing a suspended gate FET (SGFET). For that purpose the insulators silicon nitride and diamondlike (a-C:H) films, as well as the sputtered SnO/sub 2/ and Ti/W, active layers have been investigated. The gas-surface interaction has been characterized by carrying out simultaneous measurements of mass changes (quartz crystal microbalance) and work function shifts (Kelvin probe). It is shown that the threshold voltage shift of SGFETs, composed of various insulator/active layer combinations, is a superposition of the independently measured work function shifts.<>

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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers

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