{"title":"带数字读数的全集成mu -pirani压力表的制造和性能","authors":"C. Mastrangelo, R. Muller","doi":"10.1109/SENSOR.1991.148848","DOIUrl":null,"url":null,"abstract":"A thermal absolute pressure sensor of the heated microbridge type has been integrated with an active bias circuit and an 8-bit successive-approximation register (SAR) analog-to-digital (A/D) converter. The chip, which contains about 1000 MOSFETs, measures absolute gas pressure between 10 to 10/sup 4/ Pa, and it is implemented in a 14-mask, 4- mu m NMOS technology merged with the microsensor process. The fabrication process and sensing performance of the mu -pirani gauge are described.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Fabrication and performance of a fully integrated mu -pirani pressure gauge with digital readout\",\"authors\":\"C. Mastrangelo, R. Muller\",\"doi\":\"10.1109/SENSOR.1991.148848\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A thermal absolute pressure sensor of the heated microbridge type has been integrated with an active bias circuit and an 8-bit successive-approximation register (SAR) analog-to-digital (A/D) converter. The chip, which contains about 1000 MOSFETs, measures absolute gas pressure between 10 to 10/sup 4/ Pa, and it is implemented in a 14-mask, 4- mu m NMOS technology merged with the microsensor process. The fabrication process and sensing performance of the mu -pirani gauge are described.<<ETX>>\",\"PeriodicalId\":273871,\"journal\":{\"name\":\"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-06-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SENSOR.1991.148848\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.148848","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
摘要
一种加热微桥型热绝对压力传感器集成了一个有源偏置电路和一个8位连续逼近寄存器(SAR)模数(A/D)转换器。该芯片包含约1000个mosfet,可测量10至10/sup / Pa之间的绝对气体压力,并采用14掩模,4 μ m NMOS技术与微传感器工艺相结合。介绍了mu -pirani压力表的制作工艺和传感性能。
Fabrication and performance of a fully integrated mu -pirani pressure gauge with digital readout
A thermal absolute pressure sensor of the heated microbridge type has been integrated with an active bias circuit and an 8-bit successive-approximation register (SAR) analog-to-digital (A/D) converter. The chip, which contains about 1000 MOSFETs, measures absolute gas pressure between 10 to 10/sup 4/ Pa, and it is implemented in a 14-mask, 4- mu m NMOS technology merged with the microsensor process. The fabrication process and sensing performance of the mu -pirani gauge are described.<>