{"title":"The Seebeck effect in highly conductive mu c-Ge:H films and its application to sensors","authors":"S. Kodato, K. Kuroda, Y. Naito","doi":"10.1109/SENSOR.1991.149034","DOIUrl":null,"url":null,"abstract":"By combining a plasma CVD (chemical vapor deposition) system with a real-time annealing monitoring system, a highly conductive mu c-Ge:H film has been successfully fabricated on a glass substrate. This film generates a large amount of thermoelectric power (maximum -420 mu V/K). Using this microcrystalline Ge:H film thermopile, an optical power sensor and thermal vacuum gauge have been developed. In particular, when this mu c-Ge:H thermopile was used together with a low-reflectance Ni-P optical absorber, a high-accuracy, quick-response laser beam power sensor with the following characteristics was realized: responsivity, 0.3 mV/mW; response time, 1.8 s; wavelength range, 0.4 to 1.8 mu m; diameter of active area, 6 mm phi ; and resistance, 600 Omega to 1 k Omega .<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"37 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.149034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
By combining a plasma CVD (chemical vapor deposition) system with a real-time annealing monitoring system, a highly conductive mu c-Ge:H film has been successfully fabricated on a glass substrate. This film generates a large amount of thermoelectric power (maximum -420 mu V/K). Using this microcrystalline Ge:H film thermopile, an optical power sensor and thermal vacuum gauge have been developed. In particular, when this mu c-Ge:H thermopile was used together with a low-reflectance Ni-P optical absorber, a high-accuracy, quick-response laser beam power sensor with the following characteristics was realized: responsivity, 0.3 mV/mW; response time, 1.8 s; wavelength range, 0.4 to 1.8 mu m; diameter of active area, 6 mm phi ; and resistance, 600 Omega to 1 k Omega .<>