The Seebeck effect in highly conductive mu c-Ge:H films and its application to sensors

S. Kodato, K. Kuroda, Y. Naito
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Abstract

By combining a plasma CVD (chemical vapor deposition) system with a real-time annealing monitoring system, a highly conductive mu c-Ge:H film has been successfully fabricated on a glass substrate. This film generates a large amount of thermoelectric power (maximum -420 mu V/K). Using this microcrystalline Ge:H film thermopile, an optical power sensor and thermal vacuum gauge have been developed. In particular, when this mu c-Ge:H thermopile was used together with a low-reflectance Ni-P optical absorber, a high-accuracy, quick-response laser beam power sensor with the following characteristics was realized: responsivity, 0.3 mV/mW; response time, 1.8 s; wavelength range, 0.4 to 1.8 mu m; diameter of active area, 6 mm phi ; and resistance, 600 Omega to 1 k Omega .<>
高导电性mu c-Ge:H薄膜中的塞贝克效应及其在传感器中的应用
将等离子体化学气相沉积(CVD)系统与实时退火监测系统相结合,成功地在玻璃衬底上制备了高导电性的mu c-Ge:H薄膜。该薄膜产生大量热电功率(最高-420 μ V/K)。利用这种微晶Ge:H薄膜热电堆,研制了光功率传感器和热真空计。特别地,当该mu c-Ge:H热电堆与低反射率Ni-P光吸收器一起使用时,实现了高精度、快速响应的激光束功率传感器,其特性如下:响应率为0.3 mV/mW;响应时间,1.8 s;波长范围:0.4 ~ 1.8 μ m;活动区域直径,6mm φ;和电阻,600 ω到1 k ω
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