H. Offereins, H. Sandmaier, B. Folkmer, U. Steger, W. Lang
{"title":"Stress free assembly technique for a silicon based pressure sensor","authors":"H. Offereins, H. Sandmaier, B. Folkmer, U. Steger, W. Lang","doi":"10.1109/SENSOR.1991.149056","DOIUrl":null,"url":null,"abstract":"A silicon-based piezoresistive pressure sensor that is mechanically decoupled from the housing is presented. The chip is mounted via an intermediate with bellow structures to the housing. Various forms and arrangements of bellow structures and their influence on the mechanical decoupling of the chip are observed. The advantages and disadvantages of the individual structures and setups are compared by means of finite-element-method simulations and metrological characterizations of the structures realized. The investigations show that assembly-induced stresses in the area of the piezoresistors can be reduced up to 99%.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"43 32","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"26","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.149056","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 26
Abstract
A silicon-based piezoresistive pressure sensor that is mechanically decoupled from the housing is presented. The chip is mounted via an intermediate with bellow structures to the housing. Various forms and arrangements of bellow structures and their influence on the mechanical decoupling of the chip are observed. The advantages and disadvantages of the individual structures and setups are compared by means of finite-element-method simulations and metrological characterizations of the structures realized. The investigations show that assembly-induced stresses in the area of the piezoresistors can be reduced up to 99%.<>