{"title":"Photo-ASICs: integrated circuits for optical measurements using industrial CMOS technology","authors":"J. Kramer, P. Seitz, H. Baltes","doi":"10.1109/SENSOR.1991.148985","DOIUrl":null,"url":null,"abstract":"Cost-effective single-chip smart photosensors (photo-ASICs) have a wide range of applications in optical metrology systems. They may be realized through the integration of light-sensitive structures together with analog and digital electronic circuitry using a standard silicon process. Different optical sensing devices to be used as elements of such photo-ASICs (application-specific integrated circuits) were fabricated in an industrial CMOS process. Various types of vertical photodiodes, a lateral photodiode, a position-sensitive device, linear surface-channel and buried-channel charge-coupled devices, and a bucker-brigade device have been designed, fabricated in multi-project wafer services at low cost, and characterized electrically and optically. The electrical and optical performance proved to be surprisingly good.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SENSOR.1991.148985","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Cost-effective single-chip smart photosensors (photo-ASICs) have a wide range of applications in optical metrology systems. They may be realized through the integration of light-sensitive structures together with analog and digital electronic circuitry using a standard silicon process. Different optical sensing devices to be used as elements of such photo-ASICs (application-specific integrated circuits) were fabricated in an industrial CMOS process. Various types of vertical photodiodes, a lateral photodiode, a position-sensitive device, linear surface-channel and buried-channel charge-coupled devices, and a bucker-brigade device have been designed, fabricated in multi-project wafer services at low cost, and characterized electrically and optically. The electrical and optical performance proved to be surprisingly good.<>