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TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers最新文献

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Direct electro-optical actuation in silicon 硅的直接光电驱动
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148863
R. Wolffenbuttel, B.P. van Drieeunhuizen
{"title":"Direct electro-optical actuation in silicon","authors":"R. Wolffenbuttel, B.P. van Drieeunhuizen","doi":"10.1109/SENSOR.1991.148863","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148863","url":null,"abstract":"Light emitting diodes have been fabricated in silicon using p/sup +/n/sup ++/ diodes that are operated at avalanche breakdown. The poor electro-optical conversion efficiency remains the limiting factor and precludes application in large integrated displays. The optimum doping profile of the avalanche diode for light emission depends on the application. A maximum concentration is required at the surface for application in a display and the maximum should be designed in the bulk of the silicon when silicon integrated optics or optocouplers are to be fabricated. Interesting display applications are the presentation of prober data during slicing and bonding under a microscope. The main part of the emitted spectrum is in the near-infrared. The performance of the avalanche light emitting diode in a silicon optocoupler has been experimentally verified. The experiments also indicate good prospects for application in silicon integrated optics.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127014086","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Improved IC-compatible piezoelectric microphone and CMOS process 改进ic兼容压电传声器和CMOS工艺
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148858
E.S. Kim, J.R. Kim, R. Muller
{"title":"Improved IC-compatible piezoelectric microphone and CMOS process","authors":"E.S. Kim, J.R. Kim, R. Muller","doi":"10.1109/SENSOR.1991.148858","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148858","url":null,"abstract":"The authors report on an improved IC-processed microphone which has an unamplified sensitivity of approximately 100 mu V/ mu bar over the audio range. The microphone is constructed of a 2.0- mu m-thick LPCVD (low-pressure chemical vapor deposition) deposited, square, silicon nitride diaphragm (3.04 mm on an edge). On the top of the diaphragm, electrodes, insulators, and a ZnO piezoelectric film are deposited to transduce the mechanical deformation caused by the sound into an electrical signal. The microphone has been designed to be fabricated with an on-chip amplifier. The microphone has been produced without the on-chip amplifier and a signal-to-noise ratio of approximately 15 has been measured for an acoustic input of 1 mu bar (equivalent to a noise level of 50 dB SPL). Features that have improved the sensitivity over previous embodiments are: reduction of residual strain in the silicon nitride by modification of the film LPCVD deposition parameters, serial connections of the segmented, electrodes that are placed according to the diaphragm stress pattern, and design of the composite diaphragm and transducer layers to optimize sensitivity.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"126 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127072029","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 50
Fabrication of microsensor and microactuator elements by the LIGA-process 用liga工艺制备微传感器和微执行器元件
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148951
J. Mohr, P. Bley, C. Burbaum, W. Menz, U. Wallrabe
{"title":"Fabrication of microsensor and microactuator elements by the LIGA-process","authors":"J. Mohr, P. Bley, C. Burbaum, W. Menz, U. Wallrabe","doi":"10.1109/SENSOR.1991.148951","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148951","url":null,"abstract":"By combining the original LIGA-process with a sacrificial layer technique, movable microstructures are fabricated to realize microsensor and microactuator elements. As examples of movable microstructures a capacitive acceleration sensor, a microturbine, and a linear comb-drive have been fabricated. Their characteristics and results concerning their behavior are presented.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124498231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 17
Gas dependent response in temperature transient of SnO/sub 2/ gas sensor SnO/sub /气体传感器温度瞬态的气体依赖响应
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148827
Y. Hiranaka, T. Abe
{"title":"Gas dependent response in temperature transient of SnO/sub 2/ gas sensor","authors":"Y. Hiranaka, T. Abe","doi":"10.1109/SENSOR.1991.148827","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148827","url":null,"abstract":"The authors describe the gas dependent response observed in transient conductance patterns of a SnO/sub 2/ gas sensor caused by surface temperature changes, and its relationships to sensor variations. SnO/sub 2/ gas sensors were investigated for gas identification. The underlying objective was to determine how to extract the gas-specific information to the fullest extent from a single gas sensor. A temperature transient method was used. A stepwise change in heater voltage for the sensor caused a conductance change of the sensor, which showed a gas dependent transient response. The transient responses were examined after dividing them by the conductance response measured in clean air, and distinctive peaks of the response were observed. The peak times depend on each particular gas species. Therefore this method is useful for identifying gas species. The characteristics of several types of gas sensors were also studied.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"229 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123159024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
An on-wafer fabricated free-chlorine sensor 片上制造的游离氯传感器
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148845
A. van den Berg, M. Koudelka-Hep, B. van der Schoot, E. Verney-Norberg, P. Krebs, A. Grisel, N. D. de Rooij
{"title":"An on-wafer fabricated free-chlorine sensor","authors":"A. van den Berg, M. Koudelka-Hep, B. van der Schoot, E. Verney-Norberg, P. Krebs, A. Grisel, N. D. de Rooij","doi":"10.1109/SENSOR.1991.148845","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148845","url":null,"abstract":"A method for on-wafer fabrication of free-chlorine sensors is described. The sensor structure consists of a planar three-electrode electrochemical cell covered with a polyHEMA hydrogel membrane. This membrane is photolithographically patterned on-wafer. In order to guarantee a good adhesion of the membrane to the electrode surface a special oxidation consisting of a treatment in an oxygen plasma has been developed followed by a silanization procedure. The optimal operational polarization voltage for detection of free chlorine was found to be +50 mV vs. SCE. Sensors with membrane thicknesses of 10 and 50 mu m were found to give approximately linear calibration curves between 0.1 and 5 mg/1 free chlorine, with sensitivities of 2 and 0.4 nA/(mg/1), respectively.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"66 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131343623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Truly three dimensional structures microfabricated by laser chemical processing 真正的三维结构，由激光化学加工
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148926
H. Westberg, M. Boman, S. Johansson, J. Schweitz
{"title":"Truly three dimensional structures microfabricated by laser chemical processing","authors":"H. Westberg, M. Boman, S. Johansson, J. Schweitz","doi":"10.1109/SENSOR.1991.148926","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148926","url":null,"abstract":"A method for microfabrication of 3-D structures in free-space is presented. Laser-assisted chemical vapor deposition (LCVD) is used to grow a material at the point where the laser beam locally heats the substrate. This is done by moving a substrate perpendicularly relative to a laser beam by a micropositioning system, i.e. 3-D shapes can be created. The smallest structures that can be grown with this technique are about 1 mu m. Amorphous boron rods and crystalline boron springs have been manufactured as examples of micromechanical building units. The rods have a modulus of elasticity of 420-450 GPa, a fracture strain of 2.7-3.7%, and a fracture stress of 12-17 GPa. By development of the process more or less arbitrary details can be tailored for various applications.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126465398","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 16
A selective CVD tungsten process for micromotors 微电机用选择性CVD钨制程
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148989
Liang-Yuh Chen, N. MacDonald
{"title":"A selective CVD tungsten process for micromotors","authors":"Liang-Yuh Chen, N. MacDonald","doi":"10.1109/SENSOR.1991.148989","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148989","url":null,"abstract":"A selective chemical deposition (CVD) tungsten process is used to fabricate micromotors on a silicon substrate. The fabrication of the variable capacitance micromotors that have been produced using integrated-circuit processing is described. Both rotors and stators greater than 3 micrometers thick for these motors are formed using a high deposition rate, planar, and selective CVD tungsten process. Tungsten micromotors with rotor diameters of 100 micrometers and 60 micrometers have been fabricated with amorphous silicon rotor bearings.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131787476","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Miniature Fabry-Perot interferometers micromachined in silicon for use in optical fiber WDM systems 用于光纤波分复用系统的微型硅制法布里-珀罗干涉仪
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148888
J. H. Jerman, D. Clift
{"title":"Miniature Fabry-Perot interferometers micromachined in silicon for use in optical fiber WDM systems","authors":"J. H. Jerman, D. Clift","doi":"10.1109/SENSOR.1991.148888","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148888","url":null,"abstract":"The techniques of silicon micromachining have been used to fabricate a second-generation Fabry-Perot interferometer for use in the near-infrared spectral region. These devices provide a sharp optical transmission peak which can be used as wavelength division demultiplexers in optical fiber communications systems. The wavelength tuning and parallelism control of the mirror elements are achieved electrostatically, by varying the voltage between control electrodes. This second-generation device includes a thin, etch-stopped corrugated diaphragm as the suspension for the movable element.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128238970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 33
Stress analysis of SiO/sub 2//Si bi-metal effect in silicon piezoresistive accelerometers 硅压阻式加速度计中SiO/sub /Si双金属效应的应力分析
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148995
H. Muro, H. Kaneko, S. Kiyota, P. French
{"title":"Stress analysis of SiO/sub 2//Si bi-metal effect in silicon piezoresistive accelerometers","authors":"H. Muro, H. Kaneko, S. Kiyota, P. French","doi":"10.1109/SENSOR.1991.148995","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148995","url":null,"abstract":"It is pointed out that stress in a cantilever beam silicon accelerometer, caused by the SiO/sub 2//Si bi-metal effect, can result in a large temperature drift of offset. This has been simulated using a structure analysis program. The distribution of the stress within the beam shows a sharp rise at the SiO/sub 2//Si interface in contrast to an accelerometer-induced stress. The dependence of this stress on the beam structure was investigated, and the calculated value verified experimentally. Using a drift compensation method, involving an additional beam without a seismic mass and subtracting the output from that of the other beam, a reduction of the offset drift of up to 20 fold was obtained for a simple beam structure.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130609064","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Sensor materials based on convex and concave chemistry-optical detection and mass sensitive devices 基于凹凸化学光学检测和质量敏感装置的传感材料
TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers Pub Date : 1991-06-24 DOI: 10.1109/SENSOR.1991.148941
F. Dickert, P. Bauer, T. Bruckdorfer, A. Haunschild, P. Hofmann, K. Reif, G. Zwissler, E. Obermeier, S. Moller, G. Mages, W.-E. Bulst
{"title":"Sensor materials based on convex and concave chemistry-optical detection and mass sensitive devices","authors":"F. Dickert, P. Bauer, T. Bruckdorfer, A. Haunschild, P. Hofmann, K. Reif, G. Zwissler, E. Obermeier, S. Moller, G. Mages, W.-E. Bulst","doi":"10.1109/SENSOR.1991.148941","DOIUrl":"https://doi.org/10.1109/SENSOR.1991.148941","url":null,"abstract":"Based on the principles of convex and concave chemistry, sensor materials were developed for the detection of organic solvent vapors and ammonia. Species with pronounced electron donating properties are especially easy to detect with organic and inorganic cations. The resulting convex interactions permit the monitoring of ammonia by means of optical and resistive measurements. Concave chemistry was realized with liquid crystals, molecular holes, and channels. The incorporation of solvent vapors by cholesteric liquid crystals leads to absorbance changes by dichroic effects. Molecular holes and channels show an analogy to enzymes and are able to include guests which can be detected by mass-sensitive devices such as the quartz microbalance and the more sensitive surface-acoustic-wave oscillator.<<ETX>>","PeriodicalId":273871,"journal":{"name":"TRANSDUCERS '91: 1991 International Conference on Solid-State Sensors and Actuators. Digest of Technical Papers","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1991-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129550823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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