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Three terminal quantum structure based on resonant interband tunneling 基于共振带间隧穿的三终端量子结构
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482541
S. Tehrani, J. Shen, H. Goronkin
{"title":"Three terminal quantum structure based on resonant interband tunneling","authors":"S. Tehrani, J. Shen, H. Goronkin","doi":"10.1109/CORNEL.1995.482541","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482541","url":null,"abstract":"We have demonstrated a three terminal resonant interband tunneling FET (RITFET) and an XNOR device in the hybrid GaSb/AlSb/InAs and InGaAs/GaAlAs material systems. The RITFET achieved the negative transconductance desired in the multifunctional quantum logic devices. The equivalent circuit of the XNOR consists of two enhancement-mode field effect transistors, a resonant tunneling diode, and a load resistor. The XNOR functionality is achieved by using the field effect transistors to control the current through the diode and by the linear-to-multi-on-off input-to-output conversion resulting from the negative differential resistance. DC and timing measurements have confirmed the operations of the device.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130559474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Comparison of the load-pull power characteristics of common-emitter and common-base heterojunction bipolar transistors 共发射极和共基极异质结双极晶体管负载-拉功率特性的比较
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482441
A. Samelis, D. Pavlidis, D. Pehlke, W. Ho, J. Higgins, A. Sailer
{"title":"Comparison of the load-pull power characteristics of common-emitter and common-base heterojunction bipolar transistors","authors":"A. Samelis, D. Pavlidis, D. Pehlke, W. Ho, J. Higgins, A. Sailer","doi":"10.1109/CORNEL.1995.482441","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482441","url":null,"abstract":"The power characteristics of common-emitter and common-base AlGaAs-GaAs based HBTs are compared using on-wafer load/pull measurements. Gain compression is more pronounced for common-base HBTs. The sensitivity of the device gain on the load termination conditions is smaller for common-emitter than common-base HBTs. Device self-bias is strongly dependent on load termination at high power levels for CE but not for CB HBTs. As a result, a unique load termination exists resulting in both maximum gain and power added efficiency in the case of CB HBTs. In the case of CE HBTs optimum load terminations can be selected through tradeoffs between the output power and efficiency load-pull contours.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123550181","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells 利用AlAs/GaAs反射镜和应变补偿量子阱的长波VCSELs
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482528
C. Chua, Z. Zhu, Y. Lo, M. Hong, R. Bhat
{"title":"Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells","authors":"C. Chua, Z. Zhu, Y. Lo, M. Hong, R. Bhat","doi":"10.1109/CORNEL.1995.482528","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482528","url":null,"abstract":"We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"469 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123054543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Threshold characteristics of blue to ultraviolet light emitting semiconductor lasers based on the AlGaN material system 基于AlGaN材料体系的蓝光-紫外光半导体激光器的阈值特性
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482431
P. Shah, V. Mitin
{"title":"Threshold characteristics of blue to ultraviolet light emitting semiconductor lasers based on the AlGaN material system","authors":"P. Shah, V. Mitin","doi":"10.1109/CORNEL.1995.482431","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482431","url":null,"abstract":"Two-dimensional numerical simulations of AlGaN/GaN/AlGaN semiconductor lasers are performed using material parameters obtained from the literature. Important differences between these wide band gap lasers and lasers from other systems are the slow recombination rate and large band discontinuities. The behavior of the threshold, and thus the speed of operation, with variations in the aluminum content of the cladding regions, and the width of the active region are presented. Results for lasing due to band to band recombination and band to impurity level recombination are presented separately. From these we observe that the band to impurity recombination is difficult due to the reduced number of available states for recombination. Stopper layers are investigated and found to be useful at increasing carrier confinement without any detrimental effects because particle tunneling is very strong for majority carriers through the band discontinuities.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125682328","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Dual-gate HFET with closely spaced electrodes on InP 在InP上具有紧密间隔电极的双栅HFET
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482549
L. Lee, W. Long, S. Strahle, D. Geiger, B. Henle, H. Kunzel, E. Mittermeier, U. Erben, U. Spitzberg, E. Kohn
{"title":"Dual-gate HFET with closely spaced electrodes on InP","authors":"L. Lee, W. Long, S. Strahle, D. Geiger, B. Henle, H. Kunzel, E. Mittermeier, U. Erben, U. Spitzberg, E. Kohn","doi":"10.1109/CORNEL.1995.482549","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482549","url":null,"abstract":"An InGaAs/AlInAs dual-gate HFET with two closely spaced gate electrodes deposited in a common gate recess has been fabricated on InP substrate. The configuration consists of an 0.25 /spl mu/m RF-driven /spl Gamma/-gate overlapping to the source and a DC-trapezoid control gate placed approximately 0.2 /spl mu/m behind the /spl Gamma/-gate. The fabrication sequence allows one to test the device as a single gate FET before deposition of the second gate. The influence of the second gate on the transistor performance was characterized under DC- and RF-conditions. The device current could be fully modulated by either gate and the small signal RF behaviour could be tested in all modes of operation with the second gate RF-grounded. In comparison with the single gate FET, the dual-gate configuration shows an essentially reduced feedback behaviour with reduced C/sub dg/ and G/sub ds/ however, slightly increased input capacitance C/sub gs/. At V/sub ds/=1.2 V f/sub max/ is enhanced by 40%, from 190 GHz to 260 GHz, whereas the gain-bandwidth product decreases from 90 GHz to 70 GHz. The increase of f/sub max/ is strongly drain bias dependent and increases steeply beyond V/sub ds/=1.0 V.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131277028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Micromachined optical sensor 微机械光学传感器
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482434
A. Tran, D. Haronian, N. Switz, Y. Lo, N. Macdonald
{"title":"Micromachined optical sensor","authors":"A. Tran, D. Haronian, N. Switz, Y. Lo, N. Macdonald","doi":"10.1109/CORNEL.1995.482434","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482434","url":null,"abstract":"We report the fabrication and testing of a surface micromachined optical deformation sensor. The sensing element is a suspended mirror which forms part of a Fabry-Perot interferometer. In the presence of an external force, shift in interference fringe as well as change in power spectral density was observed. The sensor exhibits linear response to external applied force and has resonant frequency of 15 kHz for a symmetric double serpentine springs geometry.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"131 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122017433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The design and fabrication of monolithic millimeter wave optical receivers 单片毫米波光接收机的设计与制作
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482531
J. Burm, K. Litvin, G. Martin, W. Schaff, A. Davidson, M. Jaspan, L. F. Eastman
{"title":"The design and fabrication of monolithic millimeter wave optical receivers","authors":"J. Burm, K. Litvin, G. Martin, W. Schaff, A. Davidson, M. Jaspan, L. F. Eastman","doi":"10.1109/CORNEL.1995.482531","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482531","url":null,"abstract":"The optical receiver circuits were fabricated monolithically on GaAs based materials. The optical receivers were to detect the modulated signal at 44 GHz transmitted through optical carrier. MSM photodetectors and P-MODFET's were employed in the receiver circuits. The photodetector layer was specially designed for the high quantum efficiency for 770 nm light by using Bragg reflector layers and cap layer. InGaAs channel P-MODFET's, adapted for the post-detection amplifiers, exhibited f/sub t/ of 90 GHz and f/sub max/ of 100 GHz. For DC bias lines and isolations, ground plane capacitors and thin film isolated bias lines were used. The circuit was designed and fabricated by conjugately matching the S-parameters of each device at 44 GHz through CPW transmission lines. The receivers were measured up to 40 GHz, showing about 3 dB gain at 39 GHz.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125269139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
GaInP/GaInAs/GaAs structures for high performance MODFETs. Design, growth procedure, Hall data and device properties 高性能modfet的GaInP/GaInAs/GaAs结构。设计，生长程序，霍尔数据和器件特性
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482416
K. Bachem, W. Pletschen, M. Maier, J. Wiegert, K. Winkler, B. Pereiaslavets, L. Eastman, H. Tobler, J. Dickman, P. Narozny
{"title":"GaInP/GaInAs/GaAs structures for high performance MODFETs. Design, growth procedure, Hall data and device properties","authors":"K. Bachem, W. Pletschen, M. Maier, J. Wiegert, K. Winkler, B. Pereiaslavets, L. Eastman, H. Tobler, J. Dickman, P. Narozny","doi":"10.1109/CORNEL.1995.482416","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482416","url":null,"abstract":"A new type of GaInP/GaInAs/GaAs layer structure for MODFET devices has been developed. The novel feature of this structure is a compositionally modulated, pseudomorphic GaInP barrier which is suited to achieve record breaking two dimensional electron densities in GaInP/GaInAs/GaAs structures. Densities upwards of 3/spl times/10/sup 12//cm/sup 2/ with single-sided doping, and over 5/spl times/10/sup 12//cm/sup 2/ with double-sided doping have been obtained. Furthermore, it is demonstrated that buffer layers as thin as 2.5 nm are sufficient to achieve electron mobilities of more than 6000 cm/sup 2//Vs (RT) for electron densities of 3/spl times/10/sup 12//cm/sup 2/ in MODFET structures grown on top of these thin buffer layers. MODFET devices fabricated on this type of heterostructure using only 10 nm thick buffers have output transconductances and pinch off characteristics competing favourably with AlGaAs/GaInAs/GaAs MODFET devices fabricated on MBE grown structures. Intrinsic transconductances of 700 mS/mm and ft and fmax values of 100 and 180 GHz, respectively, demonstrate the potential of the new Al free structures.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114712096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
A SOI epitaxial-channel Si-MOSFET with velocity overshoot 具有速度超调特性的SOI外延沟道Si-MOSFET
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482538
L. Beer, W. Appel, V. Dudek, B. Hofflinger
{"title":"A SOI epitaxial-channel Si-MOSFET with velocity overshoot","authors":"L. Beer, W. Appel, V. Dudek, B. Hofflinger","doi":"10.1109/CORNEL.1995.482538","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482538","url":null,"abstract":"A novel device fabrication process using selective silicon epitaxy with lateral overgrowth and in-situ channel region generation by dopant switching during the growth process is presented. Based on this procedure SOI MOSFETs with channel lengths down to 100 nm were produced completely independent of lithographical resolution restrictions. Together with a 6 nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130672523","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Hot electron transistors on silicon substrate (HESS)-a computational prototyping 硅衬底热电子晶体管(HESS)的计算原型
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482439
E. Kan, Gyo-Young Jin, R. Dutton
{"title":"Hot electron transistors on silicon substrate (HESS)-a computational prototyping","authors":"E. Kan, Gyo-Young Jin, R. Dutton","doi":"10.1109/CORNEL.1995.482439","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482439","url":null,"abstract":"Operational principles of hot electron transistors based on the real space transfer effect are examined. New device configurations on a silicon substrate without use of heterojunctions are proposed. Design trade-offs for different operating conditions are briefly summarized. The new designs are computationally prototyped by a full-band Monte Carlo device simulator.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115340129","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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