硅衬底热电子晶体管(HESS)的计算原型

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482439

E. Kan, Gyo-Young Jin, R. Dutton

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引用次数: 0

摘要

研究了基于实际空间传递效应的热电子晶体管的工作原理。提出了不使用异质结的硅衬底上的新器件结构。简要总结了不同操作条件下的设计权衡。新设计通过全频段蒙特卡罗器件模拟器进行了计算原型。

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Hot electron transistors on silicon substrate (HESS)-a computational prototyping

Operational principles of hot electron transistors based on the real space transfer effect are examined. New device configurations on a silicon substrate without use of heterojunctions are proposed. Design trade-offs for different operating conditions are briefly summarized. The new designs are computationally prototyped by a full-band Monte Carlo device simulator.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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