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Resonant-cavity avalanche photodiodes and narrow spectral response photodiodes 谐振腔雪崩光电二极管和窄光谱响应光电二极管
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482524
S. Murtaza, K. Anselm, I. Tan, R. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell
{"title":"Resonant-cavity avalanche photodiodes and narrow spectral response photodiodes","authors":"S. Murtaza, K. Anselm, I. Tan, R. Chelakara, M.R. Islam, R. Dupuis, B. Streetman, J. Bowers, E. Hu, J. Campbell","doi":"10.1109/CORNEL.1995.482524","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482524","url":null,"abstract":"High speeds, high external quantum efficiencies, narrow spectral linewidths, and convenience in coupling make resonant-cavity photodetectors (RECAPs) good candidates for telecommunication applications. In this paper, we report a highly-efficient and wavelength-selective separate absorption and multiplication (SAM) avalanche photodiode (APD) with a thin (500 /spl Aring/) absorbing layer. The improved characteristics of the photodetector were obtained by placing the absorption and multiplication layers in a Fabry-Perot cavity. An external quantum efficiency of 77% was achieved with a spectral linewidth of less than 4 nm and an avalanche gain of more than 50. We also present the experimental results on a RECAP having an operating wavelength /spl lambda//sub 0//spl ap/1.3 /spl mu/m with a very narrow spectral response. The absorption takes place in a thin In/sub 0.53/Ga/sub 0.47/As layer placed in an InP cavity. The InP p-i-n structure was wafer bonded to a high-reflectivity GaAs-AlAs quarter-wavelength Bragg reflector. The top mirror consisted of three pairs of a ZnSe-CaF/sub 2/ quarter-wavelength stack (QWS). A spectral linewidth of 1.8 nm was obtained with an external quantum efficiency of 48%.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115268342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Nanoscale FETs and STM lithography 纳米fet和STM光刻技术
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482536
J. Tucker, C. Wang, T. Shen
{"title":"Nanoscale FETs and STM lithography","authors":"J. Tucker, C. Wang, T. Shen","doi":"10.1109/CORNEL.1995.482536","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482536","url":null,"abstract":"This paper outlines a new proposal for silicon nanoelectronics based on STM/AFM lithography, selective deposition of epitaxial silicides, and heterolayer overgrowth. The all-UHV process we envision is completely planarized, and could eventually permit fabrication of 3-dimensional devices and circuit architectures with an unlimited range of possibilities.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"29 6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123584112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A ZnS/sub 0.07/Se/sub 0.93/ metal-semiconductor field effect transistor ZnS/sub 0.07/Se/sub 0.93/金属半导体场效应晶体管
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482548
A.Z.H. Wang, W. Anderson, B.J. Wu, M. Haase, T.S. Mountziaris
{"title":"A ZnS/sub 0.07/Se/sub 0.93/ metal-semiconductor field effect transistor","authors":"A.Z.H. Wang, W. Anderson, B.J. Wu, M. Haase, T.S. Mountziaris","doi":"10.1109/CORNEL.1995.482548","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482548","url":null,"abstract":"We report the fabrication and test data for a n-ZnS/sub 0.07/Se/sub 0.93/ metal-semiconductor field effect transistor (MESFET). A ZnSSe FET could be a key element in opto-electronic integration employing light emitting devices, metal-semiconductor-metal photo-detectors (MSM-PD) and MESFET pre-amplifiers. Wide bandgap n-ZnS/sub 0.07/Se/sub 0.93/ is lattice-matched to the GaAs substrate and posses the \"light hardness\" property. A mesa active island was used to isolate devices. Source and drain (SID) ohmic contacts and gate Schottky contact were formed by Cr/In/Cr and Au, respectively. Recess etching and self-aligning techniques were adopted. Depletion mode FETs with varying gate width-to-length ratio of W/L=200 /spl mu/m/20 /spl mu/m, 200 /spl mu/m/4 /spl mu/m and 200 /spl mu/m/2 /spl mu/m were fabricated and the terminal parameters of a 2 /spl mu/m FET are as follows: the turn-on voltage, V/sub on//spl ap/1.75 V, the pinch-off voltage, V/sub P//spl ap/13 V, the unit transconductance, g/sub m/=8.73 mS/mm, and the breakdown voltage without a gate-drain bias, BV/spl ap/28 V.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125566146","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Monolithic integrated optoelectronic circuits 单片集成光电电路
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482527
M. Berroth, W. Bronner, T. Fink, J. Hornung, V. Hurm, T. Jakobus, K. Kohler, M. Lang, U. Nowotny, Z. Wang
{"title":"Monolithic integrated optoelectronic circuits","authors":"M. Berroth, W. Bronner, T. Fink, J. Hornung, V. Hurm, T. Jakobus, K. Kohler, M. Lang, U. Nowotny, Z. Wang","doi":"10.1109/CORNEL.1995.482527","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482527","url":null,"abstract":"Monolithic integration of lasers and photodetectors with electronic circuits promises higher bandwidth, improved manufacturability, smaller size, lower power and hence lower costs. This paper reviews the activities of the Fraunhofer IAF on optoelectronic integrated circuits (OEICs) for serial and parallel optical links.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129654892","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High performance microwave elements for SiGe MMICs 用于SiGe mmic的高性能微波元件
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482423
M. Case, P. Macdonald, M. Matloubian, M. Chen, L. Larson, D. Rensch
{"title":"High performance microwave elements for SiGe MMICs","authors":"M. Case, P. Macdonald, M. Matloubian, M. Chen, L. Larson, D. Rensch","doi":"10.1109/CORNEL.1995.482423","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482423","url":null,"abstract":"We demonstrate a low cost, manufacturable method for fabricating microwave elements on lossy substrates as required for Si-based devices. These microwave elements require a ground-plane on the surface of the Si substrate to shield the lossy dielectric below and use a 13 /spl mu/m thick layer of benzocyclobutene (BCB) for wave propagation. The performance of the transmission lines and MMICs thus fabricated are comparable to their GaAs counterparts.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129344235","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 12
Vapor phase 6H and 4H SiC epitaxy for high-speed devices 高速器件的气相6H和4H SiC外延
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482417
L. Rowland, A. Burk, R. C. Clarke, R. Siergiej, S. Sriram, G. Augustine, H. Hobgood, M. Driver
{"title":"Vapor phase 6H and 4H SiC epitaxy for high-speed devices","authors":"L. Rowland, A. Burk, R. C. Clarke, R. Siergiej, S. Sriram, G. Augustine, H. Hobgood, M. Driver","doi":"10.1109/CORNEL.1995.482417","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482417","url":null,"abstract":"Silicon carbide (SiC), a wide bandgap semiconductor, is currently being developed for enhanced high-power and high-temperature microwave devices. Silicon carbide wafers, now available at up to two-inch diameter with resistivities from 0.02 /spl Omega/-cm to 10/sup 7/ /spl Omega/-cm, still exhibit features such as micropipes, surface scratches, and inclusions of other polytypes. Vapor phase epitaxy (VPE) of 6H and 4H SiC, typically performed between 1450 and 1600/spl deg/C using silane and propane reagents, is impacted greatly by the quality of these wafers and the conditions used during in situ etching or the initial stages of growth. By optimizing growth conditions, device-quality homoepitaxial 6H and 4H-SiC has been grown with near specular morphology, background doping levels of less than 1/spl times/10/sup 14/ cm/sup -3/, and controlled n- and p-type doping from less than 5/spl times/10/sup 15/ cm/sup -3/ to greater than 1/spl times/10/sup 19/ cm/sup -3/.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123893551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Simulation of hot electron transport in semiconductor devices 半导体器件中热电子输运的模拟
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482525
C. Fernando, W. Frensley, R. Bowen
{"title":"Simulation of hot electron transport in semiconductor devices","authors":"C. Fernando, W. Frensley, R. Bowen","doi":"10.1109/CORNEL.1995.482525","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482525","url":null,"abstract":"A numerical technique based on semiclassical transport theory is presented to describe highly non-equilibrium electron transport in submicron devices. Open boundary conditions, polar optical phonon scattering, and full band structures are employed in our calculation. Special treatment of the abrupt junctions of potential profile is included in our model, so is the quantum reflection occurring around heterojunctions. The technique has been incorporated into an interactive program in which users may specify a region where the calculation is to be performed. Our results show that the polar optical phonon scattering has an important impact on the electron transport in hot electron transistors.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121428551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Selectively regrown ohmic contacts for high frequency and low noise FETs 高频低噪声场效应管的选择性再生欧姆触点
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482521
K. Kiziloglu, B. Keller, P. Chavarkar, S. Denbaars, U. Mishra
{"title":"Selectively regrown ohmic contacts for high frequency and low noise FETs","authors":"K. Kiziloglu, B. Keller, P. Chavarkar, S. Denbaars, U. Mishra","doi":"10.1109/CORNEL.1995.482521","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482521","url":null,"abstract":"We investigate highly doped selectively regrown GaInAs ohmic contacts to GaInAs channel FETs to obtain a stable, reliable, and low resistance contact technology. We selectively regrow n/sup +/ GaInAs on various doped-channel FET structures and standard and doped-channel HEMTs. For lower doping concentrations on the regrown GaInAs (n/spl ap/1.5/spl middot/10/sup 18/ cm/sup -3/), we encounter instabilities at higher temperatures in the contacts when HF is employed in the processing steps. However, we achieve temperature stable contacts with a contact resistance of 0.1 /spl Omega//spl middot/mm regardless of the sample's exposure to HF when higher doping (n/spl ap/7/spl middot/10/sup 18/ cm/sup -3/) is incorporated in the regrowth process. We believe that we will be able to use this stable and low resistance contact technology to achieve high performance microwave transistors.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128830217","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Rigorous treatment of the electro-thermal behaviour of multi-finger microwave power heterojunction bipolar transistors 严格处理多指微波功率异质结双极晶体管的电热行为
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482539
J. Schneider, U. Erben, H. Schumacher
{"title":"Rigorous treatment of the electro-thermal behaviour of multi-finger microwave power heterojunction bipolar transistors","authors":"J. Schneider, U. Erben, H. Schumacher","doi":"10.1109/CORNEL.1995.482539","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482539","url":null,"abstract":"A thermo-electrical model for single and multi-finger Heterojunction Bipolar Transistors (HBTs) was developed. The electrical part is based on a thermionic emission-diffusion theory. The thermal part solves the nonlinear thermal boundary problem using an orthogonal function approximation. The high frequency performance of the whole transistor is determined, calculating the admittance matrix of each individual emitter cell. The influence of the base bandgap, the emitter spacing and metal airbridges on the RF performance of multi-finger HBTs is determined numerically and analytically. The impact of the emitter contact as a thermal shunt is demonstrated.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"41 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133818989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Tunable, micromachined parallel-plate transmission lines 可调的微机械平行板传输线
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482436
A. Ayón, N. Kolias, N. MacDonald
{"title":"Tunable, micromachined parallel-plate transmission lines","authors":"A. Ayón, N. Kolias, N. MacDonald","doi":"10.1109/CORNEL.1995.482436","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482436","url":null,"abstract":"We have fabricated for the first time cantilevered, tunable, out of the plane transmission lines and demonstrated the active change of impedance levels using banks of finger capacitors as motors. The tunable lines are fabricated in a coplanar waveguide-like configuration thereby making them compatible with existing monolithic millimeter wave devices. The architecture can be readily applied to make variable matching circuits for antennas, and cascading several in series, variable length stubs. The process provides enough flexibility for design variations and future enhancements, for instance, n-switching devices, filters and phase array antennas. This novel device is simple, monolithic, does not require any high temperature steps, and can therefore, be readily incorporated to other processes.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"95 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125537529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
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