纳米fet和STM光刻技术

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482536

J. Tucker, C. Wang, T. Shen

{"title":"纳米fet和STM光刻技术","authors":"J. Tucker, C. Wang, T. Shen","doi":"10.1109/CORNEL.1995.482536","DOIUrl":null,"url":null,"abstract":"This paper outlines a new proposal for silicon nanoelectronics based on STM/AFM lithography, selective deposition of epitaxial silicides, and heterolayer overgrowth. The all-UHV process we envision is completely planarized, and could eventually permit fabrication of 3-dimensional devices and circuit architectures with an unlimited range of possibilities.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"29 6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Nanoscale FETs and STM lithography\",\"authors\":\"J. Tucker, C. Wang, T. Shen\",\"doi\":\"10.1109/CORNEL.1995.482536\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper outlines a new proposal for silicon nanoelectronics based on STM/AFM lithography, selective deposition of epitaxial silicides, and heterolayer overgrowth. The all-UHV process we envision is completely planarized, and could eventually permit fabrication of 3-dimensional devices and circuit architectures with an unlimited range of possibilities.\",\"PeriodicalId\":268401,\"journal\":{\"name\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"29 6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1995.482536\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482536","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文概述了基于STM/AFM光刻、外延硅化物选择性沉积和异质层过度生长的硅纳米电子学新方案。我们设想的全特高压工艺是完全平面化的，并最终允许制造具有无限可能性的三维设备和电路架构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Nanoscale FETs and STM lithography

This paper outlines a new proposal for silicon nanoelectronics based on STM/AFM lithography, selective deposition of epitaxial silicides, and heterolayer overgrowth. The all-UHV process we envision is completely planarized, and could eventually permit fabrication of 3-dimensional devices and circuit architectures with an unlimited range of possibilities.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

自引率

0.00%

发文量