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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits最新文献

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Monte Carlo study of electron and hole transport for high speed and low-power sub-0.1 /spl mu/m GaAs circuits 高速低功耗0.1 /spl μ m以下GaAs电路中电子和空穴输运的蒙特卡罗研究
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482534
Y. Awano, Y. Tagawa, M. Shima
{"title":"Monte Carlo study of electron and hole transport for high speed and low-power sub-0.1 /spl mu/m GaAs circuits","authors":"Y. Awano, Y. Tagawa, M. Shima","doi":"10.1109/CORNEL.1995.482534","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482534","url":null,"abstract":"In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 /spl mu/m devices show that, under the electric field of 100 kV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123601945","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice 啁啾超晶格在带隙工程AlInAs/GaInAs/InP双异质结双极晶体管中的电流输运
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482552
C. Nguyen, T. Liu, Hsiang-Chih Sun, M. Chen, D. Rensch, N. Nguyen, Utkarsh Mishra
{"title":"Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice","authors":"C. Nguyen, T. Liu, Hsiang-Chih Sun, M. Chen, D. Rensch, N. Nguyen, Utkarsh Mishra","doi":"10.1109/CORNEL.1995.482552","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482552","url":null,"abstract":"DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f/sub T/. The effects of CSL parameters on current transport are investigated.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130186144","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Cascaded self-induced holography: a new fabrication technology for optoelectronics 级联自致全息:一种新的光电制造技术
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482532
Chih-Hsien Lin, Zuhua Zhu, Y. Lo
{"title":"Cascaded self-induced holography: a new fabrication technology for optoelectronics","authors":"Chih-Hsien Lin, Zuhua Zhu, Y. Lo","doi":"10.1109/CORNEL.1995.482532","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482532","url":null,"abstract":"We present a new method of fabricating submicron gratings with a high filling factor for optoelectronic devices from a glass mask. The glass mask has gratings on both sides with a period of at least four times of the final feature size. By modifying the grating periods on both sides of the glass mask, one can achieve multiple-period gratings with a very fine period spacing for advanced wavelength division multiplexing (WDM) devices. In this paper, we demonstrate 0.5 /spl mu/m second-order gratings for 1.55 /spl mu/m distributed feedback (DFB) lasers and gratings with a 6 /spl Aring/ period difference for WDM laser arrays using only optical sources.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"80 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132450017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thermal analysis and characterization of thermally shunted AlGaAs/GaAs heterojunction bipolar transistors 热分流AlGaAs/GaAs异质结双极晶体管的热分析与表征
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482553
L. Liou, D. Barlage, J. Barrette, C. Bozada, R. Dettmer, T. Jenkins, R. Lee, M. Mack, J. Sewell
{"title":"Thermal analysis and characterization of thermally shunted AlGaAs/GaAs heterojunction bipolar transistors","authors":"L. Liou, D. Barlage, J. Barrette, C. Bozada, R. Dettmer, T. Jenkins, R. Lee, M. Mack, J. Sewell","doi":"10.1109/CORNEL.1995.482553","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482553","url":null,"abstract":"Analytical models were developed for thermal analysis of thermally-shunted heterojunction bipolar transistors. The dependence of junction temperature on thermal shunt landing pad geometry was determined using a transmission-line-like model. Assuming a nearest neighbor approximation, self-induced and coupled thermal resistances were calculated, and an equivalent thermal circuit was developed. The temperature distribution of the multiple-emitter element thermally-shunted devices was calculated and discussed. The presented model gives a guideline for thermal shunt design. Thermally-shunted devices with different emitter designs were fabricated and tested. Thermal resistances for both emitter bar and circular dot-array designs are smaller than those reported for non-thermal shunt devices by 25 to 50%. The analytical model found good agreement with the experimental measurements of fabricated devices.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125317127","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry 砷化镓垂直腔面发射激光器在硅电路上的集成
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482530
H. Fathollahnejad, S. Daryanani, D. L. Mathine, C. Chuang, R. Droopad, G. Maracas
{"title":"The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry","authors":"H. Fathollahnejad, S. Daryanani, D. L. Mathine, C. Chuang, R. Droopad, G. Maracas","doi":"10.1109/CORNEL.1995.482530","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482530","url":null,"abstract":"An InGaAs-AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123697743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model 用简单分析模型优化GaAs和InP衬底上的3d - smodfet
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482428
G. Martin, M. Seaford, R. Spencer, J. Braunstein, L. Eastman
{"title":"Optimization of 3D-SMODFETs on GaAs and InP substrates with a simple analytical model","authors":"G. Martin, M. Seaford, R. Spencer, J. Braunstein, L. Eastman","doi":"10.1109/CORNEL.1995.482428","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482428","url":null,"abstract":"Using a simple analytical method followed by a computer program that solves the detailed quantum-mechanics, it is possible to design the optimum material structures for pseudomorphic MODFETs with full channels. Using a MODFET with a pseudomorphic graded channel, and atomic planar doped pseudomorphic barriers on both sides of the channel, it is possible to achieve record-breaking electron sheet densities in the channel without having carriers in the barrier (Double-Doped Double-Strained MODFET, 3D-SMODFET). This theory is used to predicted the optimum material designs (quantum-mechanical solution) for GaAs, InP and GaN based structures.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"40 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125553044","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
High-performance InGaAs photodetectors on Si and GaAs substrates 基于Si和GaAs衬底的高性能InGaAs光电探测器
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482435
F. Ejeckam, C. Chua, Z. Zhu, Y. Lo
{"title":"High-performance InGaAs photodetectors on Si and GaAs substrates","authors":"F. Ejeckam, C. Chua, Z. Zhu, Y. Lo","doi":"10.1109/CORNEL.1995.482435","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482435","url":null,"abstract":"In this work, we demonstrate record performance operation of long wavelength (1.55 /spl mu/m) P-I-N (InP-InGaAs-InP) photodetectors on both Silicon and Gallium Arsenide substrates using a wafer bonding technique. The photodetectors were made by first bonding the P-I-N epitaxial layers to the Si and GaAs substrates followed by chemical removal of the host (InP) substrate from the P-I-N structure. The photodetectors were then fabricated atop the newly exposed P-I-N (InP-InGaAs-InP) epilayers. Dark currents of as low as 57 pA on a GaAs substrate and 0.29 nA on a Si substrate were measured under 5 V reverse bias. The responsivity at 1.55 /spl mu/m wavelength was measured to be 1 A/W, corresponding to an external quantum efficiency of 80%. The series resistance measured across the bonded interface and P-I-N layers gave 17 /spl Omega/ on GaAs and 350 /spl Omega/ on Si, respectively.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126651280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Microelectromechanical systems 微机电系统
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1900-01-01 DOI: 10.1109/CORNEL.1995.482415
M. Mehregany, M. Huff
{"title":"Microelectromechanical systems","authors":"M. Mehregany, M. Huff","doi":"10.1109/CORNEL.1995.482415","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482415","url":null,"abstract":"Integrated circuit technology has brought unprecedented computational power ever closer to the point of use, revolutionizing the design of electronics products and enabling the creation of entirely new product categories. Microelectromechanical systems (MEMS) promise to do the same for electromechanical systems through miniaturization, batch fabrication, and integration with electronics, thereby enabling the development of smart products by providing the required interface between the available computational power and the physical world through the perception and control capabilities of microsensors and microactuators. Micromechanical devices and systems are inherently smaller, lighter, and faster than their macroscopic counterparts, and in many cases are also more precise. MEMS devices are emerging as product differentiators in markets such as automotive, aerospace, industrial process control, electronics instrumentation, office equipment, appliances, and telecommunications. This paper will describe the more commonly employed fabrication techniques of MEMS technology and review several examples of MEMS devices under development at CWRU and elsewhere.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"97 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132334950","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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