The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482530

H. Fathollahnejad, S. Daryanani, D. L. Mathine, C. Chuang, R. Droopad, G. Maracas

引用次数: 3

Abstract

An InGaAs-AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.

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砷化镓垂直腔面发射激光器在硅电路上的集成

在去除衬底后，将InGaAs-AlGaAs垂直腔面发射激光器集成到CMOS逆变器芯片上。显示了激光的数字调制。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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