C. Nguyen, T. Liu, Hsiang-Chih Sun, M. Chen, D. Rensch, N. Nguyen, Utkarsh Mishra
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引用次数: 4
Abstract
DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f/sub T/. The effects of CSL parameters on current transport are investigated.