砷化镓垂直腔面发射激光器在硅电路上的集成

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482530

H. Fathollahnejad, S. Daryanani, D. L. Mathine, C. Chuang, R. Droopad, G. Maracas

{"title":"砷化镓垂直腔面发射激光器在硅电路上的集成","authors":"H. Fathollahnejad, S. Daryanani, D. L. Mathine, C. Chuang, R. Droopad, G. Maracas","doi":"10.1109/CORNEL.1995.482530","DOIUrl":null,"url":null,"abstract":"An InGaAs-AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry\",\"authors\":\"H. Fathollahnejad, S. Daryanani, D. L. Mathine, C. Chuang, R. Droopad, G. Maracas\",\"doi\":\"10.1109/CORNEL.1995.482530\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"An InGaAs-AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.\",\"PeriodicalId\":268401,\"journal\":{\"name\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"31 1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1995.482530\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482530","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

在去除衬底后，将InGaAs-AlGaAs垂直腔面发射激光器集成到CMOS逆变器芯片上。显示了激光的数字调制。

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The integration of GaAs vertical-cavity surface emitting lasers onto silicon circuitry

An InGaAs-AlGaAs vertical cavity surface emitting laser has been integrated following substrate removal onto a CMOS inverter chip. Digital modulation of the laser is shown.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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