Monte Carlo study of electron and hole transport for high speed and low-power sub-0.1 /spl mu/m GaAs circuits

Abstract

In order to evaluate high-speed and low-power performance of complementary GaAs devices, electron and hole transport in an ultra-short channel have been studied theoretically. Monte Carlo simulations for sub-0.1 /spl mu/m devices show that, under the electric field of 100 kV/cm, the peak electron velocity in GaAs reaches a value more than 4 times higher than that in silicon, indicating the significant advantages of GaAs devices for high-frequency applications. We developed a new model for Monte Carlo simulation of hole transport, which includes not only heavy and light holes, but also split-off band holes. To the best of our knowledge, this is the first time that the accurate scattering probabilities of holes of these three bands have been calculated.