啁啾超晶格在带隙工程AlInAs/GaInAs/InP双异质结双极晶体管中的电流输运

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482552

C. Nguyen, T. Liu, Hsiang-Chih Sun, M. Chen, D. Rensch, N. Nguyen, Utkarsh Mishra

{"title":"啁啾超晶格在带隙工程AlInAs/GaInAs/InP双异质结双极晶体管中的电流输运","authors":"C. Nguyen, T. Liu, Hsiang-Chih Sun, M. Chen, D. Rensch, N. Nguyen, Utkarsh Mishra","doi":"10.1109/CORNEL.1995.482552","DOIUrl":null,"url":null,"abstract":"DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f/sub T/. The effects of CSL parameters on current transport are investigated.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice\",\"authors\":\"C. Nguyen, T. Liu, Hsiang-Chih Sun, M. Chen, D. Rensch, N. Nguyen, Utkarsh Mishra\",\"doi\":\"10.1109/CORNEL.1995.482552\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f/sub T/. The effects of CSL parameters on current transport are investigated.\",\"PeriodicalId\":268401,\"journal\":{\"name\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1995.482552\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482552","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

提出了一种新的基极集电极设计。通过将空间电荷区电离掺杂产生的静电势与CSL的能带谱相结合，实现了基-集电极结势垒的消除。利用热电子发射器结构实现击穿电压和f/sub / T/的创纪录组合。研究了CSL参数对电流输运的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice

DHBTs with a new base-collector design are presented. The elimination of the potential barrier at the base-collector junction has been achieved by properly combining the electrostatic potential arising from the ionized dopants in the space charge region and the energy band profile of the CSL. A hot electron launcher structure is utilized to achieve a record combination of breakdown voltage and f/sub T/. The effects of CSL parameters on current transport are investigated.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

自引率

0.00%

发文量