半导体器件中热电子输运的模拟

C. Fernando, W. Frensley, R. Bowen
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引用次数: 1

摘要

基于半经典输运理论,提出了一种描述亚微米器件中高度非平衡电子输运的数值方法。我们的计算采用了开放边界条件、极性光学声子散射和全带结构。我们的模型对势剖面的突变结点进行了特殊处理,对异质结点周围发生的量子反射也进行了特殊处理。该技术已并入交互式程序中,用户可以在其中指定要执行计算的区域。结果表明,极化光学声子散射对热电子晶体管中的电子输运有重要影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Simulation of hot electron transport in semiconductor devices
A numerical technique based on semiclassical transport theory is presented to describe highly non-equilibrium electron transport in submicron devices. Open boundary conditions, polar optical phonon scattering, and full band structures are employed in our calculation. Special treatment of the abrupt junctions of potential profile is included in our model, so is the quantum reflection occurring around heterojunctions. The technique has been incorporated into an interactive program in which users may specify a region where the calculation is to be performed. Our results show that the polar optical phonon scattering has an important impact on the electron transport in hot electron transistors.
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