用于SiGe mmic的高性能微波元件

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482423

M. Case, P. Macdonald, M. Matloubian, M. Chen, L. Larson, D. Rensch

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引用次数: 12

摘要

我们展示了一种低成本、可制造的方法，用于在硅基器件所需的有损衬底上制造微波元件。这些微波元件需要硅衬底表面的地平面来屏蔽下面的有损介质，并使用13 /spl mu/m厚的苯并环丁烯(BCB)层进行波传播。由此制造的传输线和mmic的性能可与GaAs相媲美。

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High performance microwave elements for SiGe MMICs

We demonstrate a low cost, manufacturable method for fabricating microwave elements on lossy substrates as required for Si-based devices. These microwave elements require a ground-plane on the surface of the Si substrate to shield the lossy dielectric below and use a 13 /spl mu/m thick layer of benzocyclobutene (BCB) for wave propagation. The performance of the transmission lines and MMICs thus fabricated are comparable to their GaAs counterparts.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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