Three terminal quantum structure based on resonant interband tunneling

Abstract

We have demonstrated a three terminal resonant interband tunneling FET (RITFET) and an XNOR device in the hybrid GaSb/AlSb/InAs and InGaAs/GaAlAs material systems. The RITFET achieved the negative transconductance desired in the multifunctional quantum logic devices. The equivalent circuit of the XNOR consists of two enhancement-mode field effect transistors, a resonant tunneling diode, and a load resistor. The XNOR functionality is achieved by using the field effect transistors to control the current through the diode and by the linear-to-multi-on-off input-to-output conversion resulting from the negative differential resistance. DC and timing measurements have confirmed the operations of the device.