具有速度超调特性的SOI外延沟道Si-MOSFET

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482538

L. Beer, W. Appel, V. Dudek, B. Hofflinger

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引用次数: 2

摘要

提出了一种利用横向过生长选择性硅外延和生长过程中通过掺杂切换产生原位沟道区域的新型器件制造工艺。基于此程序，可以生产出沟道长度低至100 nm的SOI mosfet，完全不受光刻分辨率限制。与6 nm的氧化物栅极电介质一起，在室温下获得了高达700 mS/mm的本征跨导。

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A SOI epitaxial-channel Si-MOSFET with velocity overshoot

A novel device fabrication process using selective silicon epitaxy with lateral overgrowth and in-situ channel region generation by dopant switching during the growth process is presented. Based on this procedure SOI MOSFETs with channel lengths down to 100 nm were produced completely independent of lithographical resolution restrictions. Together with a 6 nm oxinitride gate dielectric, an intrinsic transconductance of up to 700 mS/mm was obtained at room temperature.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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