Dual-gate HFET with closely spaced electrodes on InP

L. Lee, W. Long, S. Strahle, D. Geiger, B. Henle, H. Kunzel, E. Mittermeier, U. Erben, U. Spitzberg, E. Kohn
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引用次数: 8

Abstract

An InGaAs/AlInAs dual-gate HFET with two closely spaced gate electrodes deposited in a common gate recess has been fabricated on InP substrate. The configuration consists of an 0.25 /spl mu/m RF-driven /spl Gamma/-gate overlapping to the source and a DC-trapezoid control gate placed approximately 0.2 /spl mu/m behind the /spl Gamma/-gate. The fabrication sequence allows one to test the device as a single gate FET before deposition of the second gate. The influence of the second gate on the transistor performance was characterized under DC- and RF-conditions. The device current could be fully modulated by either gate and the small signal RF behaviour could be tested in all modes of operation with the second gate RF-grounded. In comparison with the single gate FET, the dual-gate configuration shows an essentially reduced feedback behaviour with reduced C/sub dg/ and G/sub ds/ however, slightly increased input capacitance C/sub gs/. At V/sub ds/=1.2 V f/sub max/ is enhanced by 40%, from 190 GHz to 260 GHz, whereas the gain-bandwidth product decreases from 90 GHz to 70 GHz. The increase of f/sub max/ is strongly drain bias dependent and increases steeply beyond V/sub ds/=1.0 V.
在InP上具有紧密间隔电极的双栅HFET
在InP衬底上制备了InGaAs/AlInAs双栅极HFET,两个栅极电极在共同栅极凹槽中沉积。该配置包括与源重叠的0.25 /spl mu/m rf驱动/spl Gamma/-栅极和位于/spl Gamma/-栅极后面约0.2 /spl mu/m的dc梯形控制栅极。制造顺序允许在沉积第二个栅极之前将器件作为单栅极场效应管进行测试。在直流和射频条件下,研究了第二栅极对晶体管性能的影响。器件电流可以由任何一个栅极完全调制,并且可以在第二个栅极射频接地的所有操作模式下测试小信号射频行为。与单栅FET相比,双栅结构显示出本质上减少的反馈行为,C/sub dg/和G/sub ds/降低,但输入电容C/sub gs/略有增加。在V/sub - ds/=1.2 V时,从190 GHz到260 GHz, f/sub - max/增加了40%,而增益带宽乘积从90 GHz到70 GHz减小。f/sub max/的增加与漏极偏压密切相关,在V/sub ds/=1.0 V时急剧增加。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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