利用AlAs/GaAs反射镜和应变补偿量子阱的长波VCSELs

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482528

C. Chua, Z. Zhu, Y. Lo, M. Hong, R. Bhat

{"title":"利用AlAs/GaAs反射镜和应变补偿量子阱的长波VCSELs","authors":"C. Chua, Z. Zhu, Y. Lo, M. Hong, R. Bhat","doi":"10.1109/CORNEL.1995.482528","DOIUrl":null,"url":null,"abstract":"We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"469 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells\",\"authors\":\"C. Chua, Z. Zhu, Y. Lo, M. Hong, R. Bhat\",\"doi\":\"10.1109/CORNEL.1995.482528\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm.\",\"PeriodicalId\":268401,\"journal\":{\"name\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"volume\":\"469 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CORNEL.1995.482528\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482528","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

我们提出了一个1.53 /spl mu/m的应变补偿MQW VCSEL，使用晶圆熔接的AlAs/GaAs DBR反射镜。在室温脉冲泵浦下，我们测量了优异的动态单模特性，低阈值电流为10 mA，线宽小于0.1 nm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Long wavelength VCSELs using AlAs/GaAs mirrors and strain-compensated quantum wells

We present a 1.53 /spl mu/m strain-compensated MQW VCSEL using wafer-fused AlAs/GaAs DBR mirrors. Under room temperature pulsed pumping, we measured excellent dynamic single mode characteristics, a low threshold current of 10 mA, and a linewidth of less than 0.1 nm.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

自引率

0.00%

发文量