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Blue-green laser diodes 蓝绿色激光二极管
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482414
R. Gunshor, J. Han, A. Nurmikko
{"title":"Blue-green laser diodes","authors":"R. Gunshor, J. Han, A. Nurmikko","doi":"10.1109/CORNEL.1995.482414","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482414","url":null,"abstract":"The current status, as well as some key issues related to the growth and characterization of II-VI blue/green laser diodes are reviewed. The Zn(Se,Te) graded contact to p-ZnSe is effective in supporting the room-temperature CW operation of green (508 nm) laser diodes while device lifetimes are currently limited by the formation of dark defects in the active region. The role of extended and point defects in degradation will be discussed. Additional problems have arisen in the move to shorter wavelengths. For example, an observed increase of resistivity with increased bandgap energy has been associated with the formation of AX centers, a DX like behavior for acceptors.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125393729","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The growth of semiconductor quantum wires: a Monte Carlo study 半导体量子线的生长:蒙特卡洛研究
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482432
S. Keršulis, V. Mitin
{"title":"The growth of semiconductor quantum wires: a Monte Carlo study","authors":"S. Keršulis, V. Mitin","doi":"10.1109/CORNEL.1995.482432","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482432","url":null,"abstract":"The formation of semiconductor quantum wires on the top of ridges and by deposition through a shadowing mask has been simulated by the Monte Carlo technique. The simulation model includes tetrahedral lattice coordination of the semiconductor material, atom-atom interactions out to second-nearest neighbors, and surface reconstruction effects. The growth of quantum wires with the top (001) surface and (111) sidewalls is demonstrated. The formation of (111) sidewalls of higher quality than that of the top (001) surface has been obtained due to the larger diffusion coefficient of adatoms on the (111) plane. The dependence of the quality of quantum wires on the substrate temperature is shown.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121738304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Cryogenic high frequency operation of tunneling hot-electron transfer amplifiers 隧道热电子转移放大器的低温高频操作
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482440
M. R. Murti, J. Laskar, M. Hamai, M. Nishimoto, T. Moise
{"title":"Cryogenic high frequency operation of tunneling hot-electron transfer amplifiers","authors":"M. R. Murti, J. Laskar, M. Hamai, M. Nishimoto, T. Moise","doi":"10.1109/CORNEL.1995.482440","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482440","url":null,"abstract":"In this paper, we describe the cryogenic high speed operation of fixed and composition bandgap collector THETA devices in which the In composition within the 40 nm base has been varied from 53% to 62%. The cryogenic on-wafer measurement system at the Georgia Institute of Technology has been used to collect S-parameters at 18 K and 300 K. Initial results indicate that, at a constant bias, f/sub T/ increases by almost a factor of 2, from 15 GHz to 30 GHz, as the temperature is reduced from 300 K to 18 K primarily as the result of increased current gain. Detailed small-signal model development is presented to help estimate performance of scaled THETA structures at room temperature.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129769210","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A large signal model of the inverted InGaAs/InAlAs/InP HBT for harmonic distortion analysis 用于谐波失真分析的倒置InGaAs/InAlAs/InP HBT大信号模型
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482427
Bin Li, S. Prasad, T. Fu
{"title":"A large signal model of the inverted InGaAs/InAlAs/InP HBT for harmonic distortion analysis","authors":"Bin Li, S. Prasad, T. Fu","doi":"10.1109/CORNEL.1995.482427","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482427","url":null,"abstract":"A large signal equivalent circuit based on the Ebers-Moll model is developed for the InGaAs/InAlAs/InP collector-up HBT. The parasitic elements of the equivalent circuit are extracted at COLD (zero) bias by numerical optimization. An analytical approach is used to extract the intrinsic parameters of the small signal equivalent circuit at non-zero bias points. Appropriate equations given by device physics are fitted to the bias variation of intrinsic parameters so that the Ebers-Moll model parameters can be extracted. Harmonic distortion analysis is performed to verify the resulting HBT model. Excellent agreement between measurements and simulations is achieved at the fundamental and second harmonic frequencies. The agreement is not as good at the third harmonic frequency. This could be due to the fact that measurement inaccuracy exists in the lower drive level and the f/sub max/ of the device is very close to the third harmonic frequency.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127855870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Field control in piezoelectric [111]-oriented InGaAs/GaAs MQW and superlattice devices 压电[111]定向InGaAs/GaAs MQW和超晶格器件的场控制
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482547
J. Sánchez-Rojas, E. Muñoz, A. Sacedon, J. F. Valtueña, I. Izpura, E. Calleja
{"title":"Field control in piezoelectric [111]-oriented InGaAs/GaAs MQW and superlattice devices","authors":"J. Sánchez-Rojas, E. Muñoz, A. Sacedon, J. F. Valtueña, I. Izpura, E. Calleja","doi":"10.1109/CORNEL.1995.482547","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482547","url":null,"abstract":"In [111]-oriented InGaAs/GaAs multiple quantum wells and superlattices, the field in the wells, barriers, and the average electric field, are deduced using simple analytical expressions. The influence of the design parameters on the conduction-band profile and optoelectronics properties of strained piezoelectric p-i-n diodes is presented. In samples with negative average electric field, transient photocurrent response and photocapacitance-voltage characteristics clearly reveal that carriers accumulate at the extremes of the active region, giving rise to a long-range screening effect of the field in the wells. Coupled quantum wells and piezoelectric superlattices have been studied by photocapacitance techniques, and the revealed features were explained as due to carrier sequential tunneling and accumulation processes.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"189 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131637735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Bias dependence of RF power characteristics of 4H-SiC MESFETs 4H-SiC mesfet射频功率特性的偏置依赖性
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482418
K. Moore, C. Weitzel, K. Nordquist, L. Pond, J. Palmour, S. Allen, C. Carter
{"title":"Bias dependence of RF power characteristics of 4H-SiC MESFETs","authors":"K. Moore, C. Weitzel, K. Nordquist, L. Pond, J. Palmour, S. Allen, C. Carter","doi":"10.1109/CORNEL.1995.482418","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482418","url":null,"abstract":"4H-SiC MESFETs have been fabricated, packaged, and RF power tested under a wide range of bias conditions, ranging from Class A to Class B gate bias, and from 10 V to 50 V drain bias. Peak device performance included output power of 30.2 dBm (3.1 W/mm) at the 3 dB compression point and 38.9% power added efficiency in Class A operation, and 65.7% power added efficiency with 28.8 dBm (2.27 W/mm) maximum output power under Class B conditions. We believe this to be both the highest power density and the highest power added efficiency reported for a SiC MESFET.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130475502","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 9
A novel technique for fabricating semiconductor nanodevice arrays on silicon 在硅上制造半导体纳米器件阵列的新技术
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482433
S. Mcginnis, B. Das
{"title":"A novel technique for fabricating semiconductor nanodevice arrays on silicon","authors":"S. Mcginnis, B. Das","doi":"10.1109/CORNEL.1995.482433","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482433","url":null,"abstract":"We have developed a novel low cost nanogrowth technology for the fabrication of periodic arrays of semiconductor quantum dots on silicon with good device size uniformity. The technique utilizes material growth on a preformed template formed by electrochemical etching of aluminum on silicon. The template contains a periodic array of pores in which the semiconductor material is synthesized. The technique is inexpensive, reliable, suitable for the fabrication of a variety of semiconductors, VLSI compatible and has the potential for integration of quantum dot devices with silicon integrated circuits.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"99 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133296070","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Noise resistance of heterojunction bipolar transistors 异质结双极晶体管的抗噪声性能
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482520
A. Anwar, M. K. Jahan
{"title":"Noise resistance of heterojunction bipolar transistors","authors":"A. Anwar, M. K. Jahan","doi":"10.1109/CORNEL.1995.482520","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482520","url":null,"abstract":"It is customary to use Hawkin's model to calculate the noise performance of Heterojunction Bipolar Transistors (HBTs). As was already known, and also recently shown by Pucel and Rohde (1993), the noise resistance R/sub n/ increases monotonically with frequency. However, recent measurements have shown R/sub n/ vs. f behavior which is just the opposite and R/sub n/ decreases with frequency. This apparent inconsistency, between the theoretical prediction and the experimental measurement of R/sub n/, is the topic of the present paper. In this paper, Hawkin's isothermal model (device temperature/spl sim/ambient temperature) is revisited in order to calculate the bias dependence of R/sub n/ in HBTs with varying frequency. The incorporation of the parasitic circuit elements along with a proper calculation of junction temperature will enable one to explain for the first time the high frequency noise behavior of HBTs. Though, as noted by some researcher, the contribution of base-collector capacitance is minimal in the noise figure calculation, it will play a vital role in the calculation of R/sub n/ versus f. Also the device self-heating, which makes the isothermal approximation invalid for HBTs, is included in the present work. The obtained results will be compared with the experimental measurement to verify the validity of the model.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115333111","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resonant tunneling in tunneling hot-electron transfer amplifier (THETA) structures 隧道热电子传输放大器(THETA)结构中的共振隧道效应
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482544
J. L. Huber, T. Kramer, M. Reed, T. Moise, Y. Kao, A. Seabaugh, W. Frensley, C. Fernando
{"title":"Resonant tunneling in tunneling hot-electron transfer amplifier (THETA) structures","authors":"J. L. Huber, T. Kramer, M. Reed, T. Moise, Y. Kao, A. Seabaugh, W. Frensley, C. Fernando","doi":"10.1109/CORNEL.1995.482544","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482544","url":null,"abstract":"We have investigated a series of Tunneling Hot-Electron Transfer Amplifiers (THETAs) fabricated from the InGaAlAs system with abrupt collector-base isolation barriers. The turn-on characteristics of these structures can be modified by resonant tunneling, via a confined state in the base, occurring just before the expected ballistic turn-on.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129906785","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
2-D Monte Carlo simulations of electron transport in n-p-n InAlGaP/GaAs/InGaP heterojunction bipolar transistors for a range of current injection conditions n-p-n InAlGaP/GaAs/InGaP异质结双极晶体管中电子输运的二维蒙特卡罗模拟
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482425
M. Walmsley, R. Abram
{"title":"2-D Monte Carlo simulations of electron transport in n-p-n InAlGaP/GaAs/InGaP heterojunction bipolar transistors for a range of current injection conditions","authors":"M. Walmsley, R. Abram","doi":"10.1109/CORNEL.1995.482425","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482425","url":null,"abstract":"2-D Monte Carlo simulations of an n-p-n InAlGaP/GaAs/InGaP heterojunction bipolar transistor (HBT) are performed for a range of current injection levels. The carrier dynamics throughout the device are examined in terms of particle densities, fractional occupation of subbands and average velocity and energy distributions. The electric field distribution is also determined in a self-consistent manner and the dependence on the collector current level is studied. Two regimes of operation are observed (with and without base push-out) and the variations in base and collector transit times are calculated for each of these regimes.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"114 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128203678","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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