半导体量子线的生长:蒙特卡洛研究

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482432

S. Keršulis, V. Mitin

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引用次数: 0

摘要

利用蒙特卡罗技术模拟了半导体量子线在脊顶的形成和通过阴影掩膜沉积的过程。模拟模型包括半导体材料的四面体晶格配位，原子与原子之间的第二近邻相互作用以及表面重建效应。演示了具有上表面(001)和侧壁(111)的量子线的生长。由于吸附原子在(111)平面上的扩散系数较大，形成的(111)侧壁比顶部(001)表面质量更高。给出了量子线质量与衬底温度的关系。

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The growth of semiconductor quantum wires: a Monte Carlo study

The formation of semiconductor quantum wires on the top of ridges and by deposition through a shadowing mask has been simulated by the Monte Carlo technique. The simulation model includes tetrahedral lattice coordination of the semiconductor material, atom-atom interactions out to second-nearest neighbors, and surface reconstruction effects. The growth of quantum wires with the top (001) surface and (111) sidewalls is demonstrated. The formation of (111) sidewalls of higher quality than that of the top (001) surface has been obtained due to the larger diffusion coefficient of adatoms on the (111) plane. The dependence of the quality of quantum wires on the substrate temperature is shown.

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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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