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Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits最新文献

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High-performance AlInAs/GaInAs/InP DHBT X-band power cell with InP emitter ballast resistor 高性能AlInAs/GaInAs/InP DHBT x波段功率电池与InP发射极镇流器电阻
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482554
M. Chen, C. Nguyen, T. Liu, D. Rensch
{"title":"High-performance AlInAs/GaInAs/InP DHBT X-band power cell with InP emitter ballast resistor","authors":"M. Chen, C. Nguyen, T. Liu, D. Rensch","doi":"10.1109/CORNEL.1995.482554","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482554","url":null,"abstract":"We report for the first time large-signal performance of a multi-finger AlInAs/GaInAs/InP DHBT power cell with epitaxial InP emitter ballast resistors. The region of safe operation is extended using epitaxial InP emitter resistor structures. The thermal stability of power cells with this structure is increased compared with devices with similar layer structures but without the ballast epi-resistors. The power cell consists of ten 2-/spl mu/m/spl times/30-/spl mu/m emitter fingers. Under DC bias, the device is unconditionally stable up to J/sub c/=5/spl times/10/sup 4/ Acm/sup -2/ at V/sub ce/=6 V, and the upper range of bias is limited by burn-out (on unthinned wafer) rather than by current hogging. An output power of 1.6 W, corresponding to a high power density of 5.3 W/mm, and a power-added efficiency of 62% were measured on wafer at 9 GHz at V/sub cc/=12 V under class B CW operation. The output power can be increased at the expense of PAE. At a PAE of 54%, an output power of 1.9 W, corresponding to an impressive power density of 6.3 W/mm is obtained.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121105766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes 高速异质结双极晶体管(hbt)与隧道二极管的协整
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482542
W. Chen, G. Munns, X. Wang, G. Haddad
{"title":"Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes","authors":"W. Chen, G. Munns, X. Wang, G. Haddad","doi":"10.1109/CORNEL.1995.482542","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482542","url":null,"abstract":"Co-integration of high speed heterojunction bipolar transistors (HBTs) and tunnel diodes (TDs), forming Tunneling Bipolar Transistors (TBTs), is proposed and experimentally realized for the first time. The TBTs offer a new family of negative differential resistance transistors for applications in ultra-high speed and ultra-compact digital circuits. Especially, they can be incorporated into Si integrated circuits easily without complicated growth effort. In this paper, Si and InGaAs TDs will be described and compared in terms of device performance. Furthermore, the idea of a TBT will be demonstrated using a CBE grown structure and hybrid integration of Si devices.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130950739","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Low temperature grown AlGaAs passivation in GaAs power MESFET 低温生长AlGaAs在GaAs功率MESFET中的钝化
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482444
N. Nguyen, J. Ibbetson, W. Jiang, Utkarsh Mishra
{"title":"Low temperature grown AlGaAs passivation in GaAs power MESFET","authors":"N. Nguyen, J. Ibbetson, W. Jiang, Utkarsh Mishra","doi":"10.1109/CORNEL.1995.482444","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482444","url":null,"abstract":"We report on the device performance of a GaAs power MESFET with Low-Temperature-Grown (LTG) Al/sub 0.3/Ga/sub 0.7/As passivation. By combining two technologies, LTG passivation and MOCVD selectively regrown contacts, we were able to fabricate a record performance GaAs power MESFET. On-wafer power measurement of a device yielded a maximum output power of 1 W/mm at 30% power-added-efficiency and a linear gain of 11.5 dB. We have also looked at the current transport across LTG-Al/sub 0.3/Ga/sub 0.7/As as a function of the temperatures to gain insight into its properties.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130881048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs 利用低温mbe生长的砷化镓制备新型高灵敏度p-i-n MODFET光电探测器
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482438
S. Subramanian, D. Schulte, L. Ungler, T. Plant, J. R. Arthur
{"title":"A novel high sensitivity p-i-n MODFET photodetector using low-temperature-MBE grown GaAs","authors":"S. Subramanian, D. Schulte, L. Ungler, T. Plant, J. R. Arthur","doi":"10.1109/CORNEL.1995.482438","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482438","url":null,"abstract":"A novel, high sensitivity photodetector which combines a p-i-n diode and a modulation doped field effect transistor (MODFET) in a single device is reported for the first time. There are two possible modes of operation of the device, a vertical p-i-n mode and a lateral MODFET mode. The device exhibits a high responsivity of /spl sim/95 A/W in the MODFET mode which is /spl sim/6000 times that in the p-i-n mode. The device also has significant photo-response in the GaAs subbandgap region arising from the arsenic clusters and/or the traps present in the low-temperature grown GaAs layer.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123172323","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature grown GaAs lossy dielectric heterostructure FET 低温生长GaAs损耗介电异质结构场效应晶体管
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482551
K. Lipka, R. Splingart, R. Westphalen, E. Kohn, D. Théron, B. Boudart, G. Salmer, L. Pond, C. Weitzel
{"title":"Low temperature grown GaAs lossy dielectric heterostructure FET","authors":"K. Lipka, R. Splingart, R. Westphalen, E. Kohn, D. Théron, B. Boudart, G. Salmer, L. Pond, C. Weitzel","doi":"10.1109/CORNEL.1995.482551","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482551","url":null,"abstract":"A lossy dielectric FET has been realized and evaluated for the first time by employing /spl sigma/-LT-GaAs. 3.5 W/mm RF power capability extracted from the DC output characteristics give evidence for a field redistribution which overcomes the power limitation of Schottky gate FET devices. 60 GHz f/sub max/ values have been obtained for 1 /spl mu/m devices. Gate-drain breakdown voltages above 30 V have been identified at 2 GHz in conjunction with a channel sheet charge of 5/spl middot/10/sup 12/ cm/sup -2/. Parasitics, specific to the lossy dielectric have been widely eliminated. However limitations specific to the /spl sigma/-LT-GaAs material need still to be overcome, which is discussed.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116962163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Theoretical analysis of a 0.25 /spl mu/m gate InAlGaP/GaAs heterojunction field effect transistor using ensemble Monte Carlo simulation 0.25 /spl mu/m栅极InAlGaP/GaAs异质结场效应晶体管的集成蒙特卡罗模拟理论分析
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482522
Y. Wang, M. Hashemi, V. Nair
{"title":"Theoretical analysis of a 0.25 /spl mu/m gate InAlGaP/GaAs heterojunction field effect transistor using ensemble Monte Carlo simulation","authors":"Y. Wang, M. Hashemi, V. Nair","doi":"10.1109/CORNEL.1995.482522","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482522","url":null,"abstract":"Since its invention, designers of heterojunction field effect transistors (HFETs) have been in continuous pursuit of ways to increase the sheet charge density in the channel. An effective way of achieving higher sheet charge density and at the same time improving other device characteristics of an HFET is to use material system with larger conduction band discontinuity. Larger conduction band discontinuity in a double heterostructure HFET also results in a lower output conductance and reduced real space transfer, hence improving the device performance. The fact that the In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/P/GaAs material system has the largest bandgap difference among all III-V semiconductor heterojunctions lattice matched to GaAs makes it extremely attractive for high performance HFET device structures. In this paper a comparison of electron transport properties in a 0.25 /spl mu/m gate length In/sub 0.5/(Al/sub x/Ga/sub 1-x/)/sub 0.5/P/GaAs HFET and a 0.25 /spl mu/m gate length Al/sub 0.3/Ga/sub 0.7/As/GaAs HFET is presented based on a two-dimensional ensemble Monte Carlo simulation couple with a Poisson equation solver. In the simulation, realistic conduction band structures are used and major scattering mechanisms are included. The results show that the InAlGaP/GaAs HFET has high drain current density and higher breakdown voltage than the conventional AlGaAs/GaAs HFET, and thus is a potential candidate for high power applications.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"83 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132429926","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High uniformity 75 GHz junction HEMTs (JHEMTs) using a dry-etch gate technology 采用干蚀刻栅技术的高均匀性75ghz结hemt (jhemt)
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482550
J. Shealy, M. Hafizi, M. Thompson, H. Sun, C. Hooper, Utkarsh Mishra, L. Nguyen
{"title":"High uniformity 75 GHz junction HEMTs (JHEMTs) using a dry-etch gate technology","authors":"J. Shealy, M. Hafizi, M. Thompson, H. Sun, C. Hooper, Utkarsh Mishra, L. Nguyen","doi":"10.1109/CORNEL.1995.482550","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482550","url":null,"abstract":"This paper demonstrates a high uniformity 75 GHz (f/sub /spl tau//) GaInAs junction HEMT (JHEMT) technology with /spl plusmn/5 percent variations in the DC and RF parameters using a selective dry-etch gate process. This technology is attractive for the manufacturing of low cost MMICs.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115212625","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Parallel optical interconnects using VCSELs 使用vcsel的并行光互连
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482526
M. Lebby, C. Gaw, W. Jiang, P. Kiely, C. Shieh, P. Claisse, J. Ramdani, D. H. Hartman, D. Schwartz, C. Chun, B. M. Foley
{"title":"Parallel optical interconnects using VCSELs","authors":"M. Lebby, C. Gaw, W. Jiang, P. Kiely, C. Shieh, P. Claisse, J. Ramdani, D. H. Hartman, D. Schwartz, C. Chun, B. M. Foley","doi":"10.1109/CORNEL.1995.482526","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482526","url":null,"abstract":"Optobus is a ten channel parallel bi-directional datalink based on multimode fiber ribbons. The design represents a series of tradeoffs between cost and performance to produce a low cost interconnect solution with a minimum of 1.5 Gbit/s of aggregate throughput.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"519 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115905830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Performance evaluation of heterojunction bipolar transistors designed for high optical gain 高光增益异质结双极晶体管的性能评价
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482445
P. Enquist, A. Paolella, A. Morris, F. Reed, L. DeBarros, A. Tessmer, J. Hutchby
{"title":"Performance evaluation of heterojunction bipolar transistors designed for high optical gain","authors":"P. Enquist, A. Paolella, A. Morris, F. Reed, L. DeBarros, A. Tessmer, J. Hutchby","doi":"10.1109/CORNEL.1995.482445","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482445","url":null,"abstract":"This paper evaluates the performance of thin base Npn heterojunction bipolar transistors designed for high optical gain in the base while biased in the active regime. Pisces/Blaze simulations indicate that injected carrier concentrations exceeding 10/sup 19/ cm/sup -3/ can be achieved resulting in an estimated optical gain /spl sim/3000 cm/sup -1/. Furthermore, a very large increase in differential base electron concentration with emitter current yields a high modulation depth with no insertion loss but low f/sub T/. Estimated performance of this device in a microwave fiber optic link application is given.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128746366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated antennas and quasi-optical device arrays 集成天线和准光学器件阵列
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482421
R. York
{"title":"Integrated antennas and quasi-optical device arrays","authors":"R. York","doi":"10.1109/CORNEL.1995.482421","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482421","url":null,"abstract":"Integrated antennas have been the focus of increasing research activity, particularly for millimeter-wave power combining and \"quasi-optical\" arrays. This paper reviews some of the work in integrated antennas for oscillator and amplifier arrays carried out at UCSB. This includes unusual phenomena involving coupled-oscillator systems that have led to novel beam scanning concepts for cost-effective mm-wave radar and imaging systems.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126350640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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