发布求助
文献互助 智能选刊 最新文献

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits最新文献

筛选
英文 中文
23 GHz InP-based (1.55 /spl mu/m) pseudomorphic MQW ridge waveguide lasers 23ghz基于inp (1.55 /spl mu/m)的伪晶MQW脊波导激光器
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482529
H. Yoon, A. Gutierrez-Aitken, J. Singh, P. Bhattacharya, S. Lourdudoss
{"title":"23 GHz InP-based (1.55 /spl mu/m) pseudomorphic MQW ridge waveguide lasers","authors":"H. Yoon, A. Gutierrez-Aitken, J. Singh, P. Bhattacharya, S. Lourdudoss","doi":"10.1109/CORNEL.1995.482529","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482529","url":null,"abstract":"We have studied the characteristics of InP-based multiple quantum well (MQW) coplanar ridge waveguide lasers in order to obtain large bandwidth under weakly index-guided conditions at relatively low photon density. We have also investigated the benefits of the strain compensated structure in achieving low-threshold, high-speed lasers. A maximum modulation bandwidth of 23 GHz was measured for a 2/spl times/200 /spl mu/m/sup 2/ laser. This is the highest bandwidth measured for a ridge waveguide laser operating at 1.55 /spl mu/m. The photon density for this modulation bandwidth was only 1.8/spl times/10/sup 16/ cm/sup -3/, compared to /spl sim/10/sup 17/ cm/sup -3/ typical in buried heterostructure devices.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116753594","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration 离子注入In/sub 0.53/Ga/sub 0.47/As HFET用于光电集成
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482443
M. Liao, J. East, G. Haddad
{"title":"An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration","authors":"M. Liao, J. East, G. Haddad","doi":"10.1109/CORNEL.1995.482443","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482443","url":null,"abstract":"The fabrication process and device performance of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3/spl times/10/sup 12/ cm/sup -2/ and an energy of 90 KeV is used to create the conducting channel of the In/sub 0.53/Ga/sub 0.47/As HFET. The 1.5 /spl mu/m ion implanted In/sub 0.53/Ga/sub 0.47/As HFET exhibits a maximum extrinsic transconductance (g/sub m/) of 180 mS/mm, a cut-off frequency (f/sub T/) of 15 GHz, and a maximum frequency of oscillation (f/sub max/) of 80 GHz. The performance of the ion implanted In/sub 0.53/Ga/sub 0.47/As HFET is comparable with that of the In/sub 0.53/Ga/sub 0.47/As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET front-end amplifier and an In/sub 0.53/Ga/sub 0.47/As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"179 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121020705","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
30 W VHF 6H-SiC power static induction transistor 30w VHF 6H-SiC功率静电感应晶体管
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482419
R. C. Clarke, R. Siergiej, A. Agarwal, C. Brandt, A. Burk, A. Morse, P. A. Orphanos
{"title":"30 W VHF 6H-SiC power static induction transistor","authors":"R. C. Clarke, R. Siergiej, A. Agarwal, C. Brandt, A. Burk, A. Morse, P. A. Orphanos","doi":"10.1109/CORNEL.1995.482419","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482419","url":null,"abstract":"6H-SiC Static Induction Transistors (SITs) have been demonstrated, using SiC specific semiconductor processing technologies such as, VPE, reactive ion etching and self aligned sidewall Schottky gates. Under test conditions, 6H-SiC SITs developed 38 W of output power at 175 MHz, a power added efficiency of 60%, and an associated gain of 10 dB. The maximum channel current was 300 mA/cm, and the maximum blocking voltage was 200 V.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125220749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD MOCVD生长InGaN/GaN双异质结构led的生长与表征
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482420
S. Keller, B. Keller, Y. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. Mishra, S. Denbaars
{"title":"Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD","authors":"S. Keller, B. Keller, Y. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. Mishra, S. Denbaars","doi":"10.1109/CORNEL.1995.482420","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482420","url":null,"abstract":"We have achieved high quality InGaN epitaxial layers by atmospheric pressure MOCVD on c-plane sapphire. The indium segregation coefficient is shown to depend not only on the growth temperature, but also on the growth rate of the InGaN film. Strong band edge photoluminescence was observed for InGaN films grown at temperatures as low as 700/spl deg/C with In mole fractions up to 0.20. Preliminary results are presented on blue InGaN/GaN double heterostructure LEDs.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131780271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Far infrared Ga/sub 1-x/In/sub x/Sb/InAs-based strained-layer superlattice detectors grown by OMVPE OMVPE生长的远红外Ga/sub - 1-x/In/sub -x/ Sb/ inas基应变层超晶格探测器
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482446
M. M. Jahan, A. Anwar
{"title":"Far infrared Ga/sub 1-x/In/sub x/Sb/InAs-based strained-layer superlattice detectors grown by OMVPE","authors":"M. M. Jahan, A. Anwar","doi":"10.1109/CORNEL.1995.482446","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482446","url":null,"abstract":"Strained-layer, type-II Ga/sub 1-x/In/sub x/Sb/InAs superlattice detectors operating at 9 /spl mu/m have been grown for the first time by OMVPE. In all reported literature thus far, MBE has been exclusively used to grow this particular material system. In the present research, the material was grown by an atmospheric pressure OMVPE reactor using high purity metallorganic precursors (TM Ga, TMSb, TMIn and TBAs). A 300 /spl Aring/ of Ga/sub 1-x/In/sub x/Sb buffer layer was grown on n-GaAs(100) substrate followed by 20 periods (60 /spl Aring/ Ga/sub 0.6/In/sub 0.4/Sb/60 /spl Aring/ InAs) superlattice. A 300 /spl Aring/ InAs was grown as the capping layer. The growth took place at 600/spl deg/C with a precracker temperature of 140/spl deg/C. The absorbance characteristics measured by FTIR showed a shift in the cutoff wavelength /spl lambda/ from 1.8 /spl mu/m to 2.5 /spl mu/m when the In mole fraction was varied from 0.1 to 0.4 in Ga/sub 1-x/In/sub x/Sb layer. The use of InAs in Ga/sub 0.6/In/sub 0.4/Sb/InAs structures introduces strain and /spl lambda/ shifts from 2.5 /spl mu/m to 9 /spl mu/m as confirmed by FTIR. An increase in the number of superlattice periods (from 5 to 20) resulted in an enhanced absorbance edge. p-n photodiodes were fabricated by establishing AuGe/Ni/AuGe contacts on InAs and n-GaAs. The samples were sintered at 430/spl deg/C for 10 minutes in N/sub 2/ ambient. The samples were measured to show good I-V and R-V characteristics. The detector was edge-excited using white light to show change in conductance. The measured leakage current (1 mA<at a bias of -0.2 V) and was attributed to the lattice mismatch between GaAs and Ga/sub 0.6/In/sub 0.4/Sb (/spl sim/8%). A reduction in leakage current (or, improved electrical characteristics) is currently under investigation using a GaSb substrate.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"174 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133208234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low temperature ultra-scaled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs 用于sige - hbt的低温超尺度全自对准晶体管技术(LOTUS)
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482429
D. Behammer, D. Knoll, J. Albers, G. Fischer, D. Temmler, B. Bosch
{"title":"Low temperature ultra-scaled fully self-aligned transistor technology (LOTUS) for SiGe-HBTs","authors":"D. Behammer, D. Knoll, J. Albers, G. Fischer, D. Temmler, B. Bosch","doi":"10.1109/CORNEL.1995.482429","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482429","url":null,"abstract":"Broadband and wireless communication seem to be a technology battle-ground, with new high performance demands to the applied active and passive devices, and the optimization of the circuit design. Up to now, there are several technologies for low power and low noise or high speed application including advanced silicon bipolar transistor, III-V-HBT, and HEMT/MODFET. In this paper the advantages of SiGe-HBTs are presented and discussed regarding the fabrication in a low-cost mass production technology. For further increasing the performance of the SiGe-HBT, the vertical doping profile and the lateral structure need to be optimized. Utilizing new LQw Temperature Ultra scaled fully Self-aligned (LOTUS) integration concepts a Si heterojunction bipolar device can be achieved featuring high package density, good passivation and long-term stability.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129447848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
InP-based 28 GHz integrated antennas for point-to-multipoint distribution 基于inp的28 GHz集成天线，用于点对多点分布
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482422
M. J. Vaughan, R. Compton, K. Hur, R. A. McTaggart
{"title":"InP-based 28 GHz integrated antennas for point-to-multipoint distribution","authors":"M. J. Vaughan, R. Compton, K. Hur, R. A. McTaggart","doi":"10.1109/CORNEL.1995.482422","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482422","url":null,"abstract":"Quasi-optics offers an attractive means of creating moderate-power solid-state millimeter-wave transmitters. This paper presents the development of a 28 GHz oscillator, including an InP power HEMT and integrated with a planar, endfire antenna, which is used in testing metal reflectors designed for generating omni-directional patterns for point-to-multipoint distribution. Results of this work give insight into tailoring the reflectors for omni-directional active arrays.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132395198","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
High performance AlGaInP LEDs using reactive thermally evaporated transparent conducting indium-tin-oxide (ITO) 使用反应性热蒸发透明导电氧化铟锡(ITO)的高性能AlGaInP led
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482523
Y. Aliyu, D. Morgan, H. Thomas
{"title":"High performance AlGaInP LEDs using reactive thermally evaporated transparent conducting indium-tin-oxide (ITO)","authors":"Y. Aliyu, D. Morgan, H. Thomas","doi":"10.1109/CORNEL.1995.482523","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482523","url":null,"abstract":"Reactive thermally evaporated transparent conducting Indium-Tin-Oxide (ITO) layers are used as window material and current spreading layer on AlGaInP Light Emitting Diodes (LEDs). The sheet resistance of the ITO films deposited is of the order 4.5 ohm/sq with up to 90% transmission in the visible region of the spectrum. Optimum thickness of the p and n-type AlGaInP cladding and the top p/sup +/GaAs epitaxial layers were determined. The LEDs fabricated emit light with a peak wavelength (/spl lambda/p) at 600 nm and Full Width at Half Maximum (FWHM) of 15 nm. A forward voltage of 1.71 V at 20 mA was obtained. In all cases the devices incorporating the ITO layer gave a marginally greater output (10%) than the standard non-ITO devices.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"9 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132220766","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optimization of the optical guide design and cavity design of multiple quantum well lasers for efficient microwave optical links 高效微波光链路中多量子阱激光器波导和腔体设计的优化
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482430
R. Spencer, S. O'Keefe, J. Greenberg, G. Martin, J. Braunstein, W. Schaff, L. Eastman, Chin‐Yi Tsai
{"title":"Optimization of the optical guide design and cavity design of multiple quantum well lasers for efficient microwave optical links","authors":"R. Spencer, S. O'Keefe, J. Greenberg, G. Martin, J. Braunstein, W. Schaff, L. Eastman, Chin‐Yi Tsai","doi":"10.1109/CORNEL.1995.482430","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482430","url":null,"abstract":"We show the results of an experimental and theoretical investigation into the present limitations on the overall small signal direct modulation bandwidth in semiconductor lasers. The influences of the optical guide and cavity design are examined.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130523264","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Resonant tunneling and quantum integrated circuits 共振隧道和量子集成电路
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI: 10.1109/CORNEL.1995.482540
A. Seabaugh
{"title":"Resonant tunneling and quantum integrated circuits","authors":"A. Seabaugh","doi":"10.1109/CORNEL.1995.482540","DOIUrl":"https://doi.org/10.1109/CORNEL.1995.482540","url":null,"abstract":"Devices fabricated at the scaling limits of conventional technology must either contend with quantum-mechanical tunneling as a parasitic effect or incorporate tunneling into the device function. Taking the latter approach, the phenomenon of resonant tunneling between epitaxially-grown double-barrier heterostructures shows significant promise for extending integrated circuit performance both before and beyond the post-shrink era. Recent progress in this technology is reviewed.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117029584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
首页 上一页 下一页 尾页
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整，为了账户安全，请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
请完成安全验证×
相关产品
×
本文献相关产品
联系我们：info@booksci.cn Book学术提供免费学术资源搜索服务，方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号：481959085
Book学术官方微信