Growth and characterization of InGaN/GaN double heterostructure LEDs grown by MOCVD

S. Keller, B. Keller, Y. Wu, D. Kapolnek, H. Masui, M. Kato, S. Imagi, U. Mishra, S. Denbaars
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Abstract

We have achieved high quality InGaN epitaxial layers by atmospheric pressure MOCVD on c-plane sapphire. The indium segregation coefficient is shown to depend not only on the growth temperature, but also on the growth rate of the InGaN film. Strong band edge photoluminescence was observed for InGaN films grown at temperatures as low as 700/spl deg/C with In mole fractions up to 0.20. Preliminary results are presented on blue InGaN/GaN double heterostructure LEDs.
MOCVD生长InGaN/GaN双异质结构led的生长与表征
我们利用常压MOCVD技术在c面蓝宝石上获得了高质量的InGaN外延层。铟偏析系数不仅与生长温度有关,还与生长速率有关。在温度低至700/spl℃,In摩尔分数高达0.20的条件下生长的InGaN薄膜具有较强的带边光致发光。给出了蓝色InGaN/GaN双异质结构led的初步结果。
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