An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1995-08-07 DOI:10.1109/CORNEL.1995.482443

M. Liao, J. East, G. Haddad

{"title":"An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration","authors":"M. Liao, J. East, G. Haddad","doi":"10.1109/CORNEL.1995.482443","DOIUrl":null,"url":null,"abstract":"The fabrication process and device performance of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3/spl times/10/sup 12/ cm/sup -2/ and an energy of 90 KeV is used to create the conducting channel of the In/sub 0.53/Ga/sub 0.47/As HFET. The 1.5 /spl mu/m ion implanted In/sub 0.53/Ga/sub 0.47/As HFET exhibits a maximum extrinsic transconductance (g/sub m/) of 180 mS/mm, a cut-off frequency (f/sub T/) of 15 GHz, and a maximum frequency of oscillation (f/sub max/) of 80 GHz. The performance of the ion implanted In/sub 0.53/Ga/sub 0.47/As HFET is comparable with that of the In/sub 0.53/Ga/sub 0.47/As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET front-end amplifier and an In/sub 0.53/Ga/sub 0.47/As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"179 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

Abstract

The fabrication process and device performance of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3/spl times/10/sup 12/ cm/sup -2/ and an energy of 90 KeV is used to create the conducting channel of the In/sub 0.53/Ga/sub 0.47/As HFET. The 1.5 /spl mu/m ion implanted In/sub 0.53/Ga/sub 0.47/As HFET exhibits a maximum extrinsic transconductance (g/sub m/) of 180 mS/mm, a cut-off frequency (f/sub T/) of 15 GHz, and a maximum frequency of oscillation (f/sub max/) of 80 GHz. The performance of the ion implanted In/sub 0.53/Ga/sub 0.47/As HFET is comparable with that of the In/sub 0.53/Ga/sub 0.47/As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET front-end amplifier and an In/sub 0.53/Ga/sub 0.47/As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers.

查看原文本刊更多论文

离子注入In/sub 0.53/Ga/sub 0.47/As HFET用于光电集成

介绍了离子注入In/sub 0.53/Ga/sub 0.47/As HFET在优化的MSM光电探测器层结构中的制备工艺和器件性能。采用剂量为3/spl倍/10/sup 12/ cm/sup -2/、能量为90kev的Si(29)离子注入，建立了In/sub 0.53/Ga/sub 0.47/As HFET的导电通道。注入In/sub 0.53/Ga/sub 0.47/As的1.5 /spl μ m/ m离子HFET的最大外在跨导(g/sub m/)为180 mS/mm，截止频率(f/sub T/)为15 GHz，最大振荡频率(f/sub max/)为80 GHz。离子注入的In/sub 0.53/Ga/sub 0.47/As HFET的性能与MBE生长的In/sub 0.53/Ga/sub 0.47/As HFET的性能相当。所报道的器件性能和制造工艺表明，离子注入的In/sub 0.53/Ga/sub 0.47/As HFET前端放大器和In/sub 0.53/Ga/sub 0.47/As MSM光电探测器集成在高性能、低成本的长波光接收机中是有希望的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

自引率

0.00%

发文量