An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration

M. Liao, J. East, G. Haddad
{"title":"An ion implanted In/sub 0.53/Ga/sub 0.47/As HFET for optoelectronic integration","authors":"M. Liao, J. East, G. Haddad","doi":"10.1109/CORNEL.1995.482443","DOIUrl":null,"url":null,"abstract":"The fabrication process and device performance of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3/spl times/10/sup 12/ cm/sup -2/ and an energy of 90 KeV is used to create the conducting channel of the In/sub 0.53/Ga/sub 0.47/As HFET. The 1.5 /spl mu/m ion implanted In/sub 0.53/Ga/sub 0.47/As HFET exhibits a maximum extrinsic transconductance (g/sub m/) of 180 mS/mm, a cut-off frequency (f/sub T/) of 15 GHz, and a maximum frequency of oscillation (f/sub max/) of 80 GHz. The performance of the ion implanted In/sub 0.53/Ga/sub 0.47/As HFET is comparable with that of the In/sub 0.53/Ga/sub 0.47/As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET front-end amplifier and an In/sub 0.53/Ga/sub 0.47/As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers.","PeriodicalId":268401,"journal":{"name":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"179 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1995.482443","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The fabrication process and device performance of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET in an optimized MSM photodetector layer structure is presented. A Si(29) ion implantation with a dose of 3/spl times/10/sup 12/ cm/sup -2/ and an energy of 90 KeV is used to create the conducting channel of the In/sub 0.53/Ga/sub 0.47/As HFET. The 1.5 /spl mu/m ion implanted In/sub 0.53/Ga/sub 0.47/As HFET exhibits a maximum extrinsic transconductance (g/sub m/) of 180 mS/mm, a cut-off frequency (f/sub T/) of 15 GHz, and a maximum frequency of oscillation (f/sub max/) of 80 GHz. The performance of the ion implanted In/sub 0.53/Ga/sub 0.47/As HFET is comparable with that of the In/sub 0.53/Ga/sub 0.47/As HFET with an MBE grown conducting channel. The reported device performance and fabrication process show that integration of an ion implanted In/sub 0.53/Ga/sub 0.47/As HFET front-end amplifier and an In/sub 0.53/Ga/sub 0.47/As MSM photodetector is promising for high-performance and low-cost long wavelength optical receivers.
离子注入In/sub 0.53/Ga/sub 0.47/As HFET用于光电集成
介绍了离子注入In/sub 0.53/Ga/sub 0.47/As HFET在优化的MSM光电探测器层结构中的制备工艺和器件性能。采用剂量为3/spl倍/10/sup 12/ cm/sup -2/、能量为90kev的Si(29)离子注入,建立了In/sub 0.53/Ga/sub 0.47/As HFET的导电通道。注入In/sub 0.53/Ga/sub 0.47/As的1.5 /spl μ m/ m离子HFET的最大外在跨导(g/sub m/)为180 mS/mm,截止频率(f/sub T/)为15 GHz,最大振荡频率(f/sub max/)为80 GHz。离子注入的In/sub 0.53/Ga/sub 0.47/As HFET的性能与MBE生长的In/sub 0.53/Ga/sub 0.47/As HFET的性能相当。所报道的器件性能和制造工艺表明,离子注入的In/sub 0.53/Ga/sub 0.47/As HFET前端放大器和In/sub 0.53/Ga/sub 0.47/As MSM光电探测器集成在高性能、低成本的长波光接收机中是有希望的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信